| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 2020 | 16 | 2020 |
| Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films A Wratten, SL Pain, D Walker, AB Renz, E Khorani, T Niewelt, NE Grant, ... IEEE Journal of Photovoltaics 13 (1), 40-47, 2022 | 14 | 2022 |
| The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ... Materials Science in Semiconductor Processing 122, 105527, 2021 | 13 | 2021 |
| Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy G Lioliou, AB Renz, VA Shah, PM Gammon, AM Barnett Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022 | 8 | 2022 |
| The optimization of 3.3 kV 4H-SiC JBS diodes AB Renz, VA Shah, OJ Vavasour, GWC Baker, Y Bonyadi, Y Sharma, ... IEEE Transactions on Electron Devices 69 (1), 298-303, 2021 | 7 | 2021 |
| Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ... IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021 | 6 | 2021 |
| Development of high-quality gate oxide on 4H-SiC using atomic layer deposition AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ... Materials Science Forum 1004, 547-553, 2020 | 6 | 2020 |
| A study on free-standing 3C-SiC bipolar power diodes F Li, AB Renz, A Pérez-Tomás, V Shah, P Gammon, FL Via, M Jennings, ... Applied Physics Letters 118 (24), 2021 | 5 | 2021 |
| Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications AB Renz, F Li, OJ Vavasour, PM Gammon, T Dai, GWC Baker, F La Via, ... Semiconductor Science and Technology 36 (5), 055006, 2021 | 5 | 2021 |
| Auxetic piezoelectric effect in heterostructures MM Yang, TY Zhu, AB Renz, HM Sun, S Liu, PM Gammon, M Alexe Nature Materials 23 (1), 95-100, 2024 | 4 | 2024 |
| Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ... IEEE Transactions on Electron Devices 69 (4), 1924-1930, 2022 | 4 | 2022 |
| Surface effects of passivation within Mo/4H-SiC Schottky diodes through MOS analysis AB Renz, V Shah, OJ Vavasour, Y Bonyadi, GWC Baker, F Li, TX Dai, ... Materials Science Forum 963, 511-515, 2019 | 3 | 2019 |
| (Invited) Rare Earth Oxides on Wide Band Gap Semiconductors IZ Mitrovic, H Finch, LAH Jones, VR Dhanak, AN Hannah, R Valizadeh, ... Electrochemical Society Meeting Abstracts 241, 1072-1072, 2022 | 2 | 2022 |
| 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics AB Renz, OJ Vavasour, VA Shah, V Pathirana, T Trajkovic, Y Bonyadi, ... 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 5283-5288, 2021 | 2 | 2021 |
| A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices T Dai, L Zhang, O Vavasour, AB Renz, VA Shah, M Antoniou, PA Mawby, ... IEEE Transactions on Electron Devices 68 (3), 1162-1167, 2021 | 2 | 2021 |
| A Method to Contain the Temperature Rise of a Press-Pack Thyristor during a Short Circuit Protection Operation E Bashar, R Wu, L Ran, JO Gonzalez, AB Renz, G Baker, M Jennings, ... 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 3311-3317, 2019 | 2 | 2019 |
| Study of 4H-SiC Superjunction Schottky rectifiers with implanted p-pillars GWC Baker, CW Chan, TX Dai, AB Renz, F Li, V Shah, P Mawby, ... Materials Science Forum 963, 539-543, 2019 | 2 | 2019 |
| Optimization of SiC device topologies for Single Event Immunity Y Qi, M Antoniou, GWC Baker, AB Renz, L Zhang, PM Gammon 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment AB Renz, OJ Vavasour, A Pérez-Tomás, QZ Cao, V Shah, Y Bonyadi, ... Materials Science Forum 1062, 190-194, 2022 | 1 | 2022 |
| A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium AB Renz, OJ Vavasour, M Rommel, GWC Baker, PM Gammon, TX Dai, ... Materials Science Forum 1062, 523-527, 2022 | 1 | 2022 |
