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Title / AuthorCited by Year
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926
1912007
Phase perfection in zinc blende and wurtzite III− V nanowires using basic growth parameters
HJ Joyce, J Wong-Leung, Q Gao, HH Tan, C Jagadish
Nano letters 10 (3), 908-915
1702010
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ...
Nano letters 6 (4), 599-604
1532006
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 91 (26), 263104
1172007
Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires
LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ...
Applied physics letters 89 (17), 173126-173126-3
1112006
Carrier lifetime and mobility enhancement in nearly defect-free core− shell nanowires measured using time-resolved terahertz spectroscopy
P Parkinson, HJ Joyce, Q Gao, HH Tan, X Zhang, J Zou, C Jagadish, ...
Nano letters 9 (9), 3349-3353
1082009
Unexpected benefits of rapid growth rate for III− V nanowires
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Nano letters 9 (2), 695-701
882008
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393
732007
III–V semiconductor nanowires for optoelectronic device applications
HJ Joyce, Q Gao, H Hoe Tan, C Jagadish, Y Kim, J Zou, LM Smith, ...
Progress in Quantum Electronics 35 (2), 23-75
652011
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
S Perera, MA Fickenscher, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 93 (5), 053110-053110-3
632008
High purity GaAs nanowires free of planar defects: growth and characterization
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Advanced Functional Materials 18 (23), 3794-3800
612008
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877
602007
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 101911
532008
Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires
TB Hoang, LV Titova, JM Yarrison-Rice, HE Jackson, AO Govorov, Y Kim, ...
Nano letters 7 (3), 588-595
392007
Super deformability and Young’s modulus of GaAs nanowires
YB Wang, LF Wang, HJ Joyce, Q Gao, XZ Liao, YW Mai, HH Tan, J Zou, ...
Advanced Materials 23 (11), 1356-1360
352011
Dynamics of strongly degenerate electron-hole Plasmas and excitons in single InP nanowires
LV Titova, TB Hoang, JM Yarrison-Rice, HE Jackson, Y Kim, HJ Joyce, ...
Nano letters 7 (11), 3383-3387
342007
Novel growth and properties of GaAs nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, DY Choi, Y Guo, ...
Nanotechnology 21 (3), 035604
302010
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, HJ Joyce, Q Gao, HH Tan, ...
Angewandte Chemie International Edition 48 (4), 780-783
282009
Defect-free GaAs/AlGaAs core–shell nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, Y Guo, H Xu, ...
Crystal Growth & Design 11 (7), 3109-3114
272011
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
S Paiman, Q Gao, HJ Joyce, Y Kim, HH Tan, C Jagadish, X Zhang, Y Guo, ...
Journal of Physics D: Applied Physics 43 (44), 445402
252010
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