| Intrinsic electron accumulation at clean InN surfaces I Mahboob, TD Veal, CF McConville, H Lu, WJ Schaff Physical review letters 92 (3), 036804, 2004 | 596 | 2004 |
| Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ... Physical Review B 79 (20), 205211, 2009 | 500 | 2009 |
| Conductivity in transparent oxide semiconductors PDC King, TD Veal Journal of Physics: Condensed Matter 23 (33), 334214, 2011 | 338 | 2011 |
| Surface Electron Accumulation and the Charge Neutrality Level in PDC King, TD Veal, DJ Payne, A Bourlange, RG Egdell, CF McConville Physical review letters 101 (11), 116808, 2008 | 306 | 2008 |
| Electronic and optical properties of single crystal SnS 2: an earth-abundant disulfide photocatalyst LA Burton, TJ Whittles, D Hesp, WM Linhart, JM Skelton, B Hou, ... Journal of Materials Chemistry A 4 (4), 1312-1318, 2016 | 291 | 2016 |
| Origin of electron accumulation at wurtzite InN surfaces I Mahboob, TD Veal, LFJ Piper, CF McConville, H Lu, WJ Schaff, ... Physical Review B 69 (20), 201307, 2004 | 244 | 2004 |
| Bandgap and effective mass of epitaxial cadmium oxide PH Jefferson, SA Hatfield, TD Veal, PDC King, CF McConville, ... Applied physics letters 92 (2), 2008 | 212 | 2008 |
| Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory TJ Whittles, LA Burton, JM Skelton, A Walsh, TD Veal, VR Dhanak Chemistry of Materials 28 (11), 3718-3726, 2016 | 211 | 2016 |
| Origin of the n-type conductivity of InN: The role of positively charged dislocations LFJ Piper, TD Veal, CF McConville, H Lu, WJ Schaff Applied physics letters 88 (25), 2006 | 189 | 2006 |
| Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides PDC King, RL Lichti, YG Celebi, JM Gil, RC Vilão, HV Alberto, JP Duarte, ... Physical Review B 80 (8), 081201, 2009 | 179 | 2009 |
| Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations PDC King, TD Veal, A Schleife, J Zúñiga-Pérez, B Martel, PH Jefferson, ... Physical Review B 79 (20), 205205, 2009 | 171 | 2009 |
| InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements PDC King, TD Veal, CE Kendrick, LR Bailey, SM Durbin, CF McConville Physical Review B 78 (3), 033308, 2008 | 155 | 2008 |
| Growth, disorder, and physical properties of ZnSnN2 N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ... Applied Physics Letters 103 (4), 2013 | 147 | 2013 |
| Bulk transport measurements in ZnO: The effect of surface electron layers MW Allen, CH Swartz, TH Myers, TD Veal, CF McConville, SM Durbin Physical Review B 81 (7), 075211, 2010 | 145 | 2010 |
| Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ... Applied Physics Letters 91 (9), 2007 | 141 | 2007 |
| Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors PDC King, TD Veal, PH Jefferson, SA Hatfield, LFJ Piper, CF McConville, ... Physical Review B 77 (4), 045316, 2008 | 139 | 2008 |
| Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy L Colakerol, TD Veal, HK Jeong, L Plucinski, A DeMasi, T Learmonth, ... Physical review letters 97 (23), 237601, 2006 | 135 | 2006 |
| Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber TD Veal, N Feldberg, NF Quackenbush, WM Linhart, DO Scanlon, ... Advanced Energy Materials 5 (24), 201501462, 2015 | 124 | 2015 |
| Valence band offset of InN∕ AlN heterojunctions measured by x-ray photoelectron spectroscopy PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ... Applied physics letters 90 (13), 2007 | 117 | 2007 |
| Transition from electron accumulation to depletion at InGaN surfaces TD Veal, PH Jefferson, LFJ Piper, CF McConville, TB Joyce, PR Chalker, ... Applied Physics Letters 89 (20), 2006 | 116 | 2006 |
| Surface band-gap narrowing in quantized electron accumulation layers PDC King, TD Veal, CF McConville, J Zúñiga-Pérez, V Muñoz-Sanjosé, ... Physical Review Letters 104 (25), 256803, 2010 | 115 | 2010 |
| Self‐Compensation in Transparent Conducting F‐Doped SnO2 JEN Swallow, BAD Williamson, TJ Whittles, M Birkett, TJ Featherstone, ... Advanced Functional Materials 28 (4), 1701900, 2018 | 114 | 2018 |
| Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity PDC King, I McKenzie, TD Veal Applied Physics Letters 96 (6), 2010 | 109 | 2010 |
| Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces PDC King, TD Veal, CF McConville Physical Review B 77 (12), 125305, 2008 | 105 | 2008 |
| Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO PDC King, TD Veal, PH Jefferson, J Zúñiga-Pérez, V Muñoz-Sanjosé, ... Physical Review B 79 (3), 035203, 2009 | 103 | 2009 |
| In adlayers on -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy TD Veal, PDC King, PH Jefferson, LFJ Piper, CF McConville, H Lu, ... Physical Review B 76 (7), 075313, 2007 | 102 | 2007 |
| Growth and properties of GaSbBi alloys MK Rajpalke, WM Linhart, M Birkett, KM Yu, DO Scanlon, J Buckeridge, ... Applied Physics Letters 103 (14), 2013 | 100 | 2013 |
| Indium nitride and related alloys TD Veal Indium Nitride and Related Alloys, 2009 | 99 | 2009 |
| Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states LFJ Piper, TD Veal, MJ Lowe, CF McConville Physical Review B 73 (19), 195321, 2006 | 99 | 2006 |
| Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy LFJ Piper, L Colakerol, PDC King, A Schleife, J Zúñiga-Pérez, PA Glans, ... Physical Review B 78 (16), 165127, 2008 | 98 | 2008 |
| Isotype heterojunction solar cells using n-type Sb2Se3 thin films TDC Hobson, LJ Phillips, OS Hutter, H Shiel, JEN Swallow, CN Savory, ... Chemistry of Materials 32, 2621-2630, 2020 | 97 | 2020 |
| Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy TD Veal, PDC King, SA Hatfield, LR Bailey, CF McConville, B Martel, ... Applied Physics Letters 93 (20), 2008 | 97 | 2008 |
| Origin of high mobility in molybdenum-doped indium oxide DS Bhachu, DO Scanlon, G Sankar, TD Veal, RG Egdell, G Cibin, AJ Dent, ... Chemistry of materials 27 (8), 2788-2796, 2015 | 96 | 2015 |
| The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2„100… by oxygen plasma assisted molecular beam epitaxy A Bourlange, DJ Payne, RG Palgrave, H Zhang, JS Foord, RG Egdell, ... Journal of Applied Physics 106, 013703, 2009 | 96* | 2009 |
| Valence-band density of states and surface electron accumulation in epitaxial films SKV Farahani, TD Veal, JJ Mudd, DO Scanlon, GW Watson, O Bierwagen, ... Physical Review B 90 (15), 155413, 2014 | 92 | 2014 |
| Temperature dependence of the direct bandgap and transport properties of CdO SK Vasheghani Farahani, V Munoz-Sanjose, J Zuniga-Perez, ... Applied Physics Letters 102 (2), 2013 | 92 | 2013 |
| Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance M Birkett, WM Linhart, J Stoner, LJ Phillips, K Durose, J Alaria, JD Major, ... APL Materials 6 (8), 084901, 2018 | 85 | 2018 |
| Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors MW Allen, DY Zemlyanov, GIN Waterhouse, JB Metson, TD Veal, ... Applied Physics Letters 98 (10), 2011 | 83 | 2011 |
| Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications TJ Whittles, TD Veal, CN Savory, AW Welch, FW de Souza Lucas, ... ACS applied materials & interfaces 9 (48), 41916-41926, 2017 | 81 | 2017 |
| Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3 JEN Swallow, BAD Williamson, S Sathasivam, M Birkett, TJ Featherstone, ... Materials Horizons 7, 236-243, 2020 | 80 | 2020 |
| Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ... APL Materials 7 (2), 2019 | 80* | 2019 |
| High Bi content GaSbBi alloys MK Rajpalke, WM Linhart, M Birkett, KM Yu, J Alaria, J Kopaczek, ... Journal of applied physics 116 (4), 2014 | 77 | 2014 |
| Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires M Speckbacher, J Treu, TJ Whittles, WM Linhart, X Xu, K Saller, ... Nano letters 16 (8), 5135-5142, 2016 | 76 | 2016 |
| Variation of band bending at the surface of Mg-doped InGaN: Evidence of -type conductivity across the composition range PDC King, TD Veal, PH Jefferson, CF McConville, H Lu, WJ Schaff Physical Review B 75 (11), 115312, 2007 | 76 | 2007 |
| Identifying Raman modes of Sb 2 Se 3 and their symmetries using angle-resolved polarised Raman spectra N Fleck, TDC Hobson, CN Savory, J Buckeridge, TD Veal, MR Correia, ... Journal of materials chemistry A 8 (17), 8337-8344, 2020 | 75 | 2020 |
| Electron mobility in CdO films SK Vasheghani Farahani, TD Veal, PDC King, J Zúñiga-Pérez, ... Journal of Applied Physics 109 (7), 2011 | 74 | 2011 |
| Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires EA Anyebe, MK Rajpalke, TD Veal, CJ Jin, ZM Wang, QD Zhuang Nano Research 8, 1309-1319, 2015 | 73 | 2015 |
| Valence-band structure of InN from x-ray photoemission spectroscopy LFJ Piper, TD Veal, PH Jefferson, CF McConville, F Fuchs, J Furthmüller, ... Physical Review B 72 (24), 245319, 2005 | 72 | 2005 |
| Band gap reduction in GaNSb alloys due to the anion mismatch TD Veal, LFJ Piper, S Jollands, BR Bennett, PH Jefferson, PA Thomas, ... Applied Physics Letters 87 (13), 2005 | 72 | 2005 |
| Negative Band Gaps in Dilute Alloys TD Veal, I Mahboob, CF McConville Physical review letters 92 (13), 136801, 2004 | 71 | 2004 |
| Clean wurtzite InN surfaces prepared with atomic hydrogen LFJ Piper, TD Veal, M Walker, I Mahboob, CF McConville, H Lu, ... Journal of Vacuum Science & Technology A 23 (4), 617-620, 2005 | 68 | 2005 |
| Band anticrossing in GaNxSb1–x PH Jefferson, TD Veal, LFJ Piper, BR Bennett, CF McConville, BN Murdin, ... Applied physics letters 89 (11), 111921, 2006 | 67 | 2006 |
| Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111) KHL Zhang, DJ Payne, RG Palgrave, VK Lazarov, W Chen, ATS Wee, ... Chemistry of Materials 21 (19), 4353-4355, 2009 | 66 | 2009 |
| Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys TD Veal, LFJ Piper, PH Jefferson, I Mahboob, CF McConville, M Merrick, ... Applied Physics Letters 87 (18), 2005 | 66 | 2005 |
| Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2 (111) KHL Zhang, VK Lazarov, TD Veal, FE Oropeza, CF McConville, RG Egdell, ... Journal of Physics: Condensed Matter 23 (33), 334211, 2011 | 65 | 2011 |
| Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy QD Zhuang, EA Anyebe, R Chen, H Liu, AM Sanchez, MK Rajpalke, ... Nano Letters 15 (2), 1109-1116, 2015 | 63 | 2015 |
| Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 BAD Williamson, TJ Featherstone, SS Sathasivam, JEN Swallow, H Shiel, ... Chemistry of Materials 32, 1964-1973, 2020 | 62 | 2020 |
| Bi-induced band gap reduction in epitaxial InSbBi alloys MK Rajpalke, WM Linhart, KM Yu, M Birkett, J Alaria, JJ Bomphrey, ... Applied Physics Letters 105 (21), 2014 | 62 | 2014 |
| GeSe: optical spectroscopy and theoretical study of a van der Waals solar absorber PAE Murgatroyd, MJ Smiles, CN Savory, TP Shalvey, JEN Swallow, ... Chemistry of Materials 32 (7), 3245-3253, 2020 | 57 | 2020 |
| Indium nitride: Evidence of electron accumulation TD Veal, I Mahboob, LFJ Piper, CF McConville, H Lu, WJ Schaff Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 57 | 2004 |
| Unintentional conductivity of indium nitride: transport modelling and microscopic origins PDC King, TD Veal, CF McConville Journal of Physics: Condensed Matter 21 (17), 174201, 2009 | 56 | 2009 |
| Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors JEN Swallow, RG Palgrave, PAE Murgatroyd, A Regoutz, M Lorenz, ... ACS Applied Materials & Interfaces, 2021 | 55 | 2021 |
| Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells H Shiel, OS Hutter, LJ Phillips, JEN Swallow, LAH Jones, TJ Featherstone, ... ACS Applied Energy Materials 3 (12), 11617-11626, 2020 | 55 | 2020 |
| Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature IZ Mitrovic, M Althobaiti, AD Weerakkody, VR Dhanak, WM Linhart, ... Journal of Applied Physics 115 (11), 2014 | 54 | 2014 |
| Inversion and accumulation layers at InN surfaces TD Veal, LFJ Piper, WJ Schaff, CF McConville Journal of crystal growth 288 (2), 268-272, 2006 | 54 | 2006 |
| Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime MP Polak, P Scharoch, R Kudrawiec, J Kopaczek, MJ Winiarski, ... Journal of Physics D: Applied Physics 47 (35), 355107, 2014 | 53 | 2014 |
| Temperature invariance of electron accumulation LFJ Piper, TD Veal, I Mahboob, CF McConville, H Lu, WJ Schaff Physical Review B 70 (11), 115333, 2004 | 52 | 2004 |
| The influence of conduction band plasmons on core-level photoemission spectra of InN PDC King, TD Veal, H Lu, SA Hatfield, WJ Schaff, CF McConville Surface science 602 (4), 871-875, 2008 | 48 | 2008 |
| Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride M Birkett, CN Savory, AN Fioretti, P Thompson, CA Muryn, ... Physical Review B 95 (11), 115201, 2017 | 47 | 2017 |
| Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance J Kopaczek, R Kudrawiec, WM Linhart, MK Rajpalke, KM Yu, TS Jones, ... Applied Physics Letters 103 (26), 2013 | 47 | 2013 |
| Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ... Physical Review B 77 (11), 115213, 2008 | 47 | 2008 |
| Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics I Vazquez-Fernandez, S Mariotti, OS Hutter, M Birkett, TD Veal, ... Chemistry of Materials 32 (15), 6676-6684, 2020 | 46 | 2020 |
| Band Alignments, Band Gap, Core-levels and Valence-Band States in Cu3BiS3 for Photovoltaics TJ Whittles, TD Veal, CN Savory, P Yates, P Murgatroyd, J Gibbon, ... ACS applied materials & interfaces 11 (30), 27033-27047, 2019 | 46 | 2019 |
| Band bending at the surfaces of In-rich InGaN alloys LR Bailey, TD Veal, PDC King, CF McConville, J Pereiro, J Grandal, ... Journal of Applied Physics 104 (11), 2008 | 46 | 2008 |
| Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity M Merrick, SA Cripps, BN Murdin, TJC Hosea, TD Veal, CF McConville, ... Physical Review B 76 (7), 075209, 2007 | 44 | 2007 |
| Influence of Polymorphism on the Electronic Structure of GaO JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials, 2020 | 43 | 2020 |
| Growth of dilute GaNSb by plasma-assisted MBE L Buckle, BR Bennett, S Jollands, TD Veal, NR Wilson, BN Murdin, ... Journal of crystal growth 278 (1-4), 188-192, 2005 | 43 | 2005 |
| Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite EA Anyebe, AM Sánchez, S Hindmarsh, X Chen, J Shao, MK Rajpalke, ... Nano Letters 15 (7), 4348-4355, 2015 | 42 | 2015 |
| Valence band modification of Cr 2 O 3 by Ni-doping: creating a high figure of merit p-type TCO E Arca, AB Kehoe, TD Veal, A Shmeliov, DO Scanlon, C Downing, D Daly, ... Journal of Materials Chemistry C 5 (47), 12610-12618, 2017 | 41 | 2017 |
| Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1− xBix dilute bismide with x≤ 0.034 J Kopaczek, R Kudrawiec, MP Polak, P Scharoch, M Birkett, TD Veal, ... Applied Physics Letters 105 (22), 2014 | 41 | 2014 |
| Profiling of electron accumulation layers in the near-surface region of InAs (110) TD Veal, CF McConville Physical Review B 64 (8), 085311, 2001 | 41 | 2001 |
| Growth of ZnSnN2 by Molecular Beam Epitaxy N Feldberg, JD Aldous, PA Stampe, RJ Kennedy, TD Veal, SM Durbin Journal of electronic materials 43, 884-888, 2014 | 40 | 2014 |
| ZnSnN2: A new earth-abundant element semiconductor for solar cells N Feldberg, B Keen, JD Aldous, DO Scanlon, PA Stampe, RJ Kennedy, ... 2012 38th IEEE Photovoltaic Specialists Conference, 002524-002527, 2012 | 39 | 2012 |
| Surface, bulk, and interface electronic properties of nonpolar InN WM Linhart, TD Veal, PDC King, G Koblmüller, CS Gallinat, JS Speck, ... Applied Physics Letters 97 (11), 2010 | 38 | 2010 |
| Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO A Schleife, C Rödl, F Fuchs, J Furthmüller, F Bechstedt, PH Jefferson, ... Deakin University, 2008 | 36 | 2008 |
| Low-and high-energy photoluminescence from GaSb1-xBix with 0< x: 0.042 J Kopaczek, R Kudrawiec, W Linhart, M Rajpalke, T Jones, M Ashwin, ... Applied Physics Express 7 (11), 111202, 2014 | 35 | 2014 |
| Core-level photoemission spectroscopy of nitrogen bonding in alloys TD Veal, I Mahboob, LFJ Piper, CF McConville, M Hopkinson Applied physics letters 85 (9), 1550-1552, 2004 | 35 | 2004 |
| Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs (001) surfaces MJ Lowe, TD Veal, CF McConville, GR Bell, S Tsukamoto, N Koguchi Surface science 523 (1-2), 179-188, 2003 | 35 | 2003 |
| How oxygen exposure improves the back contact and performance of antimony selenide solar cells N Fleck, OS Hutter, LJ Phillips, H Shiel, TDC Hobson, VR Dhanak, ... ACS applied materials & interfaces 12 (47), 52595-52602, 2020 | 34 | 2020 |
| Bi flux-dependent MBE growth of GaSbBi alloys MK Rajpalke, WM Linhart, KM Yu, TS Jones, MJ Ashwin, TD Veal Journal of Crystal Growth 425, 241-244, 2015 | 33 | 2015 |
| Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour H Shiel, OS Hutter, LJ Phillips, M Al Turkestani, VR Dhanak, TD Veal, ... Journal of Physics: Energy 1 (4), 045001, 2019 | 30 | 2019 |
| Sulphur-induced electron accumulation on InAs: a comparison of the (0 0 1) and (1 1 1) B surfaces MJ Lowe, TD Veal, AP Mowbray, CF McConville Surface science 544 (2-3), 320-328, 2003 | 30 | 2003 |
| HREELS and photoemission study of GaSb (100)-(1× 3) surfaces prepared by optimal atomic hydrogen cleaning TD Veal, MJ Lowe, CF McConville Surface science 499 (2-3), 251-260, 2002 | 30 | 2002 |
| Electron accumulation at InN/AlN and InN/GaN interfaces TD Veal, LFJ Piper, I Mahboob, H Lu, WJ Schaff, CF McConville physica status solidi (c) 2 (7), 2246-2249, 2005 | 29 | 2005 |
| Surface electronic properties of clean and S-terminated InSb (001) and (111) B PDC King, TD Veal, MJ Lowe, CF McConville Journal of Applied Physics 104 (8), 2008 | 28 | 2008 |
| Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2 MJ Wahila, G Paez, CN Singh, A Regoutz, S Sallis, MJ Zuba, J Rana, ... Physical Review Materials 3, 074602, 2019 | 27 | 2019 |
| Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces TD Veal, LFJ Piper, MR Phillips, MH Zareie, H Lu, WJ Schaff, ... physica status solidi (a) 203 (1), 85-92, 2006 | 27 | 2006 |
| The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-κ dielectrics SFJ Cox, RL Lichti, JS Lord, EA Davis, RC Vilão, JM Gil, TD Veal, ... Physica Scripta 88 (6), 068503, 2013 | 26 | 2013 |
| Self-compensation in highly n-type InN C Rauch, F Tuomisto, PDC King, TD Veal, H Lu, WJ Schaff Applied Physics Letters 101 (1), 2012 | 26 | 2012 |
| Sulfur passivation of InN surface electron accumulation LR Bailey, TD Veal, CE Kendrick, SM Durbin, CF McConville Applied Physics Letters 95 (19), 2009 | 26 | 2009 |
Chris McConvillePro Vice-Chancellor Research, Deakin UniversityVerified email at warwick.ac.uk
