Roman Engel-Herbert
Roman Engel-Herbert
Direktor, Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Foschungsverbund Berlin
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Cited by
Cited by
The ReaxFF reactive force-field: development, applications and future directions
TP Senftle, S Hong, MM Islam, SB Kylasa, Y Zheng, YK Shin, ...
npj Computational Materials 2 (1), 1-14, 2016
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer
Journal of applied physics 108 (12), 2010
Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V−1 s−1
J Son, P Moetakef, B Jalan, O Bierwagen, NJ Wright, R Engel-Herbert, ...
Nature materials 9 (6), 482-484, 2010
Correlated metals as transparent conductors
L Zhang, Y Zhou, L Guo, W Zhao, A Barnes, HT Zhang, C Eaton, Y Zheng, ...
Nature materials 15 (2), 204-210, 2016
A steep-slope transistor based on abrupt electronic phase transition
N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ...
Nature communications 6 (1), 7812, 2015
Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach
B Jalan, R Engel-Herbert, NJ Wright, S Stemmer
Journal of Vacuum Science & Technology A 27 (3), 461-464, 2009
Calculation of the magnetic stray field of a uniaxial magnetic domain
R Engel-Herbert, T Hesjedal
Journal of Applied Physics 97 (7), 2005
Synchronized charge oscillations in correlated electron systems
N Shukla, A Parihar, E Freeman, H Paik, G Stone, V Narayanan, H Wen, ...
Scientific reports 4 (1), 4964, 2014
Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides
JA Moyer, C Eaton, R Engel‐Herbert
Advanced Materials 25 (26), 3578-3582, 2013
Wafer-scale growth of VO2 thin films using a combinatorial approach
HT Zhang, L Zhang, D Mukherjee, YX Zheng, RC Haislmaier, N Alem, ...
Nature communications 6 (1), 1-8, 2015
Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
DK Mohata, R Bijesh, S Mujumdar, C Eaton, R Engel-Herbert, T Mayer, ...
2011 International Electron Devices Meeting, 33.5. 1-33.5. 4, 2011
Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy
H Paik, JA Moyer, T Spila, JW Tashman, JA Mundy, E Freeman, N Shukla, ...
Applied physics letters 107 (16), 2015
Frontiers in the growth of complex oxide thin films: past, present, and future of hybrid MBE
M Brahlek, AS Gupta, J Lapano, J Roth, HT Zhang, L Zhang, R Haislmaier, ...
Advanced Functional Materials 28 (9), 1702772, 2018
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 2013
Opportunities in vanadium-based strongly correlated electron systems
M Brahlek, L Zhang, J Lapano, HT Zhang, R Engel-Herbert, N Shukla, ...
MRS Communications 7 (1), 27-52, 2017
Analysis of trap state densities at HfO2/In0. 53Ga0. 47As interfaces
Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer
Applied Physics Letters 96 (10), 2010
Emergent interface vibrational structure of oxide superlattices
ER Hoglund, DL Bao, A O’Hara, S Makarem, ZT Piontkowski, JR Matson, ...
Nature 601 (7894), 556-561, 2022
SrNbO3 as a transparent conductor in the visible and ultraviolet spectra
Y Park, J Roth, D Oka, Y Hirose, T Hasegawa, A Paul, A Pogrebnyakov, ...
Communications Physics 3 (1), 102, 2020
Accessing a growth window for SrVO3 thin films
M Brahlek, L Zhang, C Eaton, HT Zhang, R Engel-Herbert
Applied Physics Letters 107 (14), 2015
Quantification of trap densities at dielectric/III–V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer
Applied Physics Letters 97 (6), 2010
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