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Salvatore Maria Amoroso
Salvatore Maria Amoroso
University of Glasgow - Gold Standard Simulations Ltd
Verified email at goldstandardsimulations.com - Homepage
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Cited by
Cited by
Year
Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization
A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ...
IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014
682014
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
482014
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state
SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ...
IEEE electron device letters 34 (5), 683-685, 2013
472013
Physical modeling for programming of TANOS memories in the Fowler–Nordheim regime
CM Compagnoni, A Mauri, SM Amoroso, A Maconi, AS Spinelli
IEEE transactions on electron devices 56 (9), 2008-2015, 2009
372009
Semi-analytical model for the transient operation of gate-all-around charge-trap memories
SM Amoroso, CM Compagnoni, A Mauri, A Maconi, AS Spinelli, ...
IEEE transactions on electron devices 58 (9), 3116-3123, 2011
352011
A survey of carbon nanotube interconnects for energy efficient integrated circuits
A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ...
IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017
342017
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ...
IEEE transactions on electron devices 60 (2), 833-839, 2012
342012
Comprehensive investigation of statistical effects in nitride memories—Part I: Physics-based modeling
A Mauri, CM Compagnoni, SM Amoroso, A Maconi, A Ghetti, AS Spinelli, ...
IEEE transactions on electron devices 57 (9), 2116-2123, 2010
332010
Impact of nonuniform doping on random telegraph noise in flash memory devices
A Ghetti, SM Amoroso, A Mauri, CM Compagnoni
IEEE transactions on electron devices 59 (2), 309-315, 2011
312011
Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
262015
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ...
IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017
252017
Three-dimensional simulation of charge-trap memory programming—Part I: Average behavior
SM Amoroso, A Maconi, A Mauri, CM Compagnoni, AS Spinelli, ...
IEEE transactions on electron devices 58 (7), 1864-1871, 2011
242011
Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization
L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ...
IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015
232015
Problems with the continuous doping TCAD simulations of decananometer CMOS transistors
A Asenov, F Adamu-Lema, X Wang, SM Amoroso
IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014
232014
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
Solid-state electronics 84, 120-126, 2013
222013
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
222013
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov
IEEE transactions on electron devices 60 (12), 4008-4013, 2013
212013
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories
SM Amoroso, A Maconi, A Mauri, CM Compagnoni, E Greco, E Camozzi, ...
2010 International Electron Devices Meeting, 22.6. 1-22.6. 4, 2010
202010
A worst-case analysis of trap-assisted tunneling leakage in DRAM using a machine learning approach
J Lee, P Asenov, M Aldegunde, SM Amoroso, AR Brown, V Moroz
IEEE Electron Device Letters 42 (2), 156-159, 2020
192020
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov
IEEE electron device letters 34 (5), 686-688, 2013
192013
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