Joan Redwing
Joan Redwing
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Cited by
In situ epitaxial MgB 2 thin films for superconducting electronics
X Zeng, AV Pogrebnyakov, A Kotcharov, JE Jones, XX Xi, EM Lysczek, ...
Nature materials 1 (1), 35-38, 2002
Piezoelectric charge densities in AlGaN/GaN HFETs
PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
GaN-based devices using (Ga, AL, In) N base layers
RP Vaudo, JM Redwing, MA Tischler, DW Brown
US Patent 6,156,581, 2000
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
Bottom-up assembly of large-area nanowire resonator arrays
M Li, RB Bhiladvala, TJ Morrow, JA Sioss, KK Lew, JM Redwing, ...
Nature Nanotechnology 3 (2), 88-92, 2008
High-field superconductivity in alloyed thin films
V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B 71 (1), 012504, 2005
High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
J Redwing, MA Tischler
US Patent 5,874,747, 1999
Crystallographic wet chemical etching of GaN
DA Stocker, EF Schubert, JM Redwing
Applied Physics Letters 73 (18), 2654-2656, 1998
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
Silicon nanowire array photoelectrochemical cells
AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
III-V nitride substrate boule and method of making and using the same
RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler
US Patent 6,596,079, 2003
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates
KK Lew, JM Redwing
Journal of Crystal Growth 254 (1-2), 14-22, 2003
Optical properties of Si-doped GaN
EF Schubert, ID Goepfert, W Grieshaber, JM Redwing
Applied Physics Letters 71 (7), 921-923, 1997
Optical properties of rectangular cross-sectional ZnS nanowires
Q Xiong, G Chen, JD Acord, X Liu, JJ Zengel, HR Gutierrez, JM Redwing, ...
Nano Letters 4 (9), 1663-1668, 2004
AlGaN/GaN HEMTs grown on SiC substrates
SC Binari, JM Redwing, G Kelner, W Kruppa
Electronics Letters 33 (3), 242-243, 1997
High voltage (450 V) GaN schottky rectifiers
ZZ Bandić, PM Bridger, EC Piquette, TC McGill, RP Vaudo, VM Phanse, ...
Applied physics letters 74 (9), 1266-1268, 1999
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
D Qiao, LS Yu, SS Lau, JM Redwing, JY Lin, HX Jiang
Journal of Applied Physics 87 (2), 801-804, 2000
Nanometer‐scale modification and welding of silicon and metallic nanowires with a high‐intensity electron beam
S Xu, M Tian, J Wang, J Xu, JM Redwing, MHW Chan
Small 1 (12), 1221-1229, 2005
Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor–Liquid–Solid Si/Si1−xGex Heterostructure Nanowires
TE Clark, P Nimmatoori, KK Lew, L Pan, JM Redwing, EC Dickey
Nano letters 8 (4), 1246-1252, 2008
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