Ursula Wurstbauer
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Cited by
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
B Miller, A Steinhoff, B Pano, J Klein, F Jahnke, A Holleitner, ...
Nano letters 17 (9), 5229-5237, 2017
Photocatalytic Stability of Single- and Few-Layer MoS2
E Parzinger, B Miller, B Blaschke, JA Garrido, JW Ager, A Holleitner, ...
ACS nano 9 (11), 11302-11309, 2015
Electrical spin injection and detection in lateral all-semiconductor devices
M Ciorga, A Einwanger, U Wurstbauer, D Schuh, W Wegscheider, ...
Physical Review B 79 (16), 165321, 2009
Morphology and flexibility of graphene and few-layer graphene on various substrates
U Stöberl, U Wurstbauer, W Wegscheider, D Weiss, J Eroms
Applied Physics Letters 93 (5), 051906, 2008
Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
J Wierzbowski, J Klein, F Sigger, C Straubinger, M Kremser, T Taniguchi, ...
Scientific reports 7 (1), 1-6, 2017
Imaging ellipsometry of graphene
U Wurstbauer, C Röling, U Wurstbauer, W Wegscheider, M Vaupel, ...
Applied Physics Letters 97 (23), 231901, 2010
Evidence for a Magnetic Proximity Effect up to Room Temperature at Interfaces
F Maccherozzi, M Sperl, G Panaccione, J Minár, S Polesya, H Ebert, ...
Physical review letters 101 (26), 267201, 2008
Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation
J Klein, M Lorke, M Florian, F Sigger, L Sigl, S Rey, J Wierzbowski, ...
Nature communications 10 (1), 1-8, 2019
Photogating of mono- and few-layer MoS2
B Miller, E Parzinger, A Vernickel, AW Holleitner, U Wurstbauer
Applied Physics Letters 106 (12), 122103, 2015
Light–matter interaction in transition metal dichalcogenides and their heterostructures
U Wurstbauer, B Miller, E Parzinger, AW Holleitner
Journal of Physics D: Applied Physics 50 (17), 173001, 2017
Imaging spectroscopic ellipsometry of MoS2
S Funke, B Miller, E Parzinger, P Thiesen, AW Holleitner, U Wurstbauer
Journal of Physics: Condensed Matter 28 (38), 385301, 2016
Weak localization in ferromagnetic (Ga, Mn) As nanostructures
D Neumaier, K Wagner, S Geißler, U Wurstbauer, J Sadowski, ...
Physical review letters 99 (11), 116803, 2007
Robust valley polarization of helium ion modified atomically thin MoS2
J Klein, A Kuc, A Nolinder, M Altzschner, J Wierzbowski, F Sigger, ...
2D Materials 5 (1), 011007, 2017
Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse‐reaction growth
B Loitsch, D Rudolph, S Morkötter, M Döblinger, G Grimaldi, L Hanschke, ...
Advanced Materials 27 (13), 2195-2202, 2015
All-electrical measurement of the density of states in (Ga, Mn) As
D Neumaier, M Turek, U Wurstbauer, A Vogl, M Utz, W Wegscheider, ...
Physical review letters 103 (8), 087203, 2009
Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2
B Miller, J Lindlau, M Bommert, A Neumann, H Yamaguchi, A Holleitner, ...
Nature communications 10 (1), 1-6, 2019
Resonant Inelastic Light Scattering Investigation of Low-Lying Gapped Excitations in the Quantum Fluid at
U Wurstbauer, KW West, LN Pfeiffer, A Pinczuk
Physical review letters 110 (2), 026801, 2013
Magnetic anisotropy of thin films on GaAs (311)A probed by ferromagnetic resonance
C Bihler, H Huebl, MS Brandt, STB Gönnenwein, M Reinwald, ...
Applied physics letters 89 (1), 012507, 2006
Atomistic defects as single-photon emitters in atomically thin MoS2
K Barthelmi, J Klein, A Hötger, L Sigl, F Sigger, E Mitterreiter, S Rey, ...
Applied Physics Letters 117 (7), 070501, 2020
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