| Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva Journal of Applied Physics 90 (7), 3396-3404, 2001 | 130 | 2001 |
| Direct and trap-assisted elastic tunneling through ultrathin gate oxides F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva Journal of Applied Physics 91 (8), 5116-5124, 2002 | 118 | 2002 |
| Variability in resistive memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems 5 (6), 2200338, 2023 | 97 | 2023 |
| Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ... Journal of Physics D: Applied Physics 53 (22), 225106, 2020 | 87 | 2020 |
| Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019 | 87 | 2019 |
| Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002 | 85 | 2002 |
| A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017 | 78 | 2017 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 2014 | 76 | 2014 |
| An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 2013 | 75 | 2013 |
| On the thermal models for resistive random access memory circuit simulation JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ... Nanomaterials 11 (5), 1261, 2021 | 68 | 2021 |
| A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñè, S Long, ... Semiconductor Science and Technology 31 (11), 115013, 2016 | 67 | 2016 |
| : a physical model for RRAM devices simulation MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza Journal of Computational Electronics 16, 1095-1120, 2017 | 63 | 2017 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 57 | 2015 |
| A SPICE Compact Model for Unipolar RRAM Reset Process Analysis F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan IEEE, 2015 | 57 | 2015 |
| In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 55 | 2017 |
| Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ... arXiv preprint arXiv:1702.01533, 2017 | 48 | 2017 |
| Toward reliable compact modeling of multilevel 1T-1R RRAM devices for neuromorphic systems E Perez-Bosch Quesada, R Romero-Zaliz, E Perez, ... Electronics 10 (6), 645, 2021 | 47 | 2021 |
| Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro Applied physics letters 88 (12), 2006 | 47 | 2006 |
| A comprehensive analysis on progressive reset transitions in RRAMs MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ... Journal of Physics D: applied physics 47 (20), 205102, 2014 | 44 | 2014 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 42 | 2010 |
Juan B. RoldánDepartment of Electronics and Computer Technology. Granada University (Spain)Verified email at ugr.es
