Hideo Hosono
Hideo Hosono
Professor, Materials and Structures Laboratory, Tokyo Institute of Technology
Verified email at lucid.msl.titech.ac.jp
TitleCited byYear
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
8751*2008
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
83092008
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
Nature 432 (7016), 488, 2004
64742004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
35762007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
35452006
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,601,984, 2009
35222009
Display
H Kumomi, H Hosono, T Kamiya, K Nomura
US Patent 7,791,072, 2010
34932010
Integrated circuits utilizing amorphous oxides
K Abe, H Hosono, T Kamiya, K Nomura
US Patent 7,863,611, 2011
34802011
Field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,868,326, 2011
34702011
Oxide thin film
H Kawazoe, H Hosono, A Kudo, H Yanagi
US Patent 6,294,274, 2001
34702001
Light-emitting device
T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,872,259, 2011
34642011
Field effect transistor manufacturing method
H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
34622010
Sensor and image pickup device
K Saito, H Hosono, T Kamiya, K Nomura
US Patent 7,453,065, 2008
34472008
LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda
US Patent 7,323,356, 2008
34112008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
34082009
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,116, 2009
34072009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
25542003
P-type electrical conduction in transparent thin films of CuAlO2
H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono
Nature 389 (6654), 939, 1997
19281997
Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs
H Takahashi, K Igawa, K Arii, Y Kamihara, M Hirano, H Hosono
Nature 453 (7193), 376, 2008
14202008
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials 11 (4), 044305, 2010
13912010
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