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Chao-Yang (Michael) Chen
Chao-Yang (Michael) Chen
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Year
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ...
2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015
822015
Endurance degradation mechanisms in TiN\ Ta2O5\ Ta resistive random-access memory cells
CY Chen, L Goux, A Fantini, S Clima, R Degraeve, A Redolfi, YY Chen, ...
Applied Physics Letters 106 (5), 053501, 2015
502015
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
S Clima, YY Chen, CY Chen, L Goux, B Govoreanu, R Degraeve, ...
Journal of Applied Physics 119 (22), 225107, 2016
442016
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device
L Goux, A Fantini, A Redolfi, CY Chen, FF Shi, R Degraeve, YY Chen, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
442014
Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells
CY Chen, L Goux, A Fantini, A Redolfi, S Clima, R Degraeve, YY Chen, ...
International Electron Devices Meeting-IEDM, 355-358, 2014
422014
Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches
J Kwon, AA Sharma, CY Chen, A Fantini, M Jurczak, AA Herzing, JA Bain, ...
ACS Applied Materials & Interfaces 8 (31), 20176-20184, 2016
402016
Electron beam induced current in InSb-InAs nanowire type-III heterostructures
CY Chen, A Shik, A Pitanti, A Tredicucci, D Ercolani, L Sorba, F Beltram, ...
Applied Physics Letters 101 (6), 063116, 2012
272012
Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM
CY Chen, A Fantini, L Goux, R Degraeve, S Clima, A Redolfi, ...
IEEE International Electron Devices Meeting-IEDM, 261-264, 2015
252015
Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
J Salfi, C Stewart, SV Nair, CY Chen, S Yongshun, E Rusli, FK Lin, M Yu, ...
New Journal of Physics 15 (9), 093029, 2013
19*2013
Quantitative endurance failure model for filamentary RRAM
R Degraeve, A Fantini, P Roussel, L Goux, A Costantino, CY Chen, ...
2015 Symposium on VLSI Technology (VLSI Technology), T188-T189, 2015
172015
Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM
L Goux, A Belmonte, U Celano, J Woo, S Folkersma, CY Chen, A Redolfi, ...
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2016 …, 2016
152016
Novel Flexible and Cost-Effective Retention Assessment Method for TMO-based RRAM
CY Chen, A Fantini, L Goux, G Gorine, A Redolfi, G Groeseneken, ...
IEEE Electron Device Letters, 2016
142016
Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention
CY Chen, A Fantini, R Degraeve, A Redolfi, G Groeseneken, L Goux, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2016
132016
Doped Gd-O based RRAM for embedded application
CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak
2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016
122016
Stack optimization of oxide-based RRAM for fast write speed (< 1μs) at low operating current (< 10μA)
CY Chen, L Goux, A Fantini, R Degraeve, A Redolfi, G Groeseneken, ...
Solid-State Electronics 125, 198-203, 2016
112016
Quantitative Model for Post-program Instabilities in Filamentary RRAM
R Degraeve, A Fantini, G Gorine, P Roussel, S Clima, CY Chen, ...
IEEE International Reliability Physics Symposium (IRPS) 2016, 6C.1, 2016
112016
Quantitative retention model for filamentary oxide-based resistive RAM
R Degraeve, CY Chen, U Celano, A Fantini, L Goux, D Linten, GS Kar
Microelectronic Engineering 178, 38-41, 2017
72017
Low‐current operation of novel Gd2O3‐based RRAM cells with large memory window
CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak
physica status solidi (a) 213 (2), 320-324, 2016
72016
Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions
A Shik, CY Chen, A Pitanti, A Tredicucci, D Ercolani, L Sorba, F Beltram, ...
Journal of Applied Physics 113 (10), 104307, 2013
52013
Oxygen chemical potential profile optimization for fast low current (<10uA) resistive switching in oxide-based RRAM
CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak
2016 International Symposium on VLSI Technology, Systems and Application …, 2016
42016
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