| Conductance quantization in resistive random access memory Y Li, S Long, Y Liu, C Hu, J Teng, Q Liu, H Lv, J Suñé, M Liu Nanoscale research letters 10 (1), 420, 2015 | 134 | 2015 |
| Integration and co-design of memristive devices and algorithms for artificial intelligence W Wang, W Song, P Yao, Y Li, J Van Nostrand, Q Qiu, D Ielmini, JJ Yang Iscience 23 (12), 2020 | 70 | 2020 |
| Superior retention of low-resistance state in conductive bridge random access memory with single filament formation X Xu, H Lv, H Liu, T Gong, G Wang, M Zhang, Y Li, Q Liu, S Long, M Liu IEEE Electron Device Letters 36 (2), 129-131, 2014 | 58 | 2014 |
| Impact of program/erase operation on the performances of oxide-based resistive switching memory G Wang, S Long, Z Yu, M Zhang, Y Li, D Xu, H Lv, Q Liu, X Yan, M Wang, ... Nanoscale research letters 10 (1), 39, 2015 | 55 | 2015 |
| Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure M Zhang, S Long, G Wang, X Xu, Y Li, Q Liu, H Lv, X Lian, E Miranda, ... Applied Physics Letters 105 (19), 2014 | 53 | 2014 |
| Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation G Wang, S Long, Z Yu, M Zhang, T Ye, Y Li, D Xu, H Lv, Q Liu, M Wang, ... Applied Physics Letters 106, 092103, 2015 | 46 | 2015 |
| Investigation of LRS dependence on the retention of HRS in CBRAM X Xu, H Lv, H Liu, Q Luo, T Gong, M Wang, G Wang, M Zhang, Y Li, Q Liu, ... Nanoscale Research Letters 10, 1-6, 2015 | 40 | 2015 |
| A memristive deep belief neural network based on silicon synapses W Wang, L Danial, Y Li, E Herbelin, E Pikhay, Y Roizin, B Hoffer, Z Wang, ... Nature Electronics 5 (12), 870-880, 2022 | 34 | 2022 |
| Tuning the stoichiometry and electrical properties of tantalum oxide thin films Y Li, S Sanna, K Norrman, DV Christensen, CS Pedersen, JMG Lastra, ... Applied Surface Science 470, 1071-1074, 2019 | 24 | 2019 |
| Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography J Niu, M Zhang, Y Li, S Long, H Lv, Q Liu, M Liu Journal of Vacuum Science & Technology B 34 (2), 2016 | 22 | 2016 |
| Operation methods of resistive random access memory GM Wang, SB Long, MY Zhang, Y Li, XX Xu, HT Liu, M Wang, PX Sun, ... Science China Technological Sciences 57, 2295-2304, 2014 | 22 | 2014 |
| Analysis on the filament structure evolution in reset transition of Cu/HfO2/Pt RRAM device M Zhang, S Long, Y Li, Q Liu, H Lv, E Miranda, J Suñé, M Liu Nanoscale Research Letters 11 (1), 269, 2016 | 21 | 2016 |
| A physical model for the statistics of the set switching time of resistive RAM measured with the width-adjusting pulse operation method M Zhang, G Wang, S Long, Z Yu, Y Li, D Xu, H Lv, Q Liu, E Miranda, ... IEEE Electron Device Letters 36 (12), 1303-1306, 2015 | 18 | 2015 |
| An overview of the switching parameter variation of RRAM M Zhang, S Long, G Wang, Y Li, X Xu, H Liu, R Liu, M Wang, C Li, P Sun, ... Chinese science bulletin 59, 5324-5337, 2014 | 18 | 2014 |
| Phase separation in amorphous tantalum oxide from first principles CS Pedersen, JH Chang, Y Li, N Pryds, JM Garcia Lastra APL Materials 8 (7), 2020 | 17 | 2020 |
| Efficient training of the memristive deep belief net immune to non‐idealities of the synaptic devices W Wang, B Hoffer, T Greenberg-Toledo, Y Li, M Zou, E Herbelin, R Ronen, ... Advanced Intelligent Systems 4 (5), 2100249, 2022 | 13 | 2022 |
| A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element W Wang, Y Li, M Wang, L Wang, Q Liu, W Banerjee, L Li, M Liu 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 50-51, 2016 | 12 | 2016 |
| Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories Y Li, S Kvatinsky, L Kornblum Frontiers in Physics 9, 772238, 2021 | 9 | 2021 |
| Redox memristors with volatile threshold switching behavior for neuromorphic computing YH Wang, TC Gong, YX Ding, Y Li, W Wang, ZA Chen, N Du, E Covi, ... Journal of Electronic Science and Technology 20 (4), 100177, 2022 | 8 | 2022 |
| Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices Y Li, W Wang, D Zhang, M Baskin, A Chen, S Kvatinsky, E Yalon, ... Advanced Electronic Materials, 2200800, 2022 | 8 | 2022 |
Qi LiuFudan UniversityVerified email at ime.ac.cn
