Gali Ádám
Gali Ádám
Wigner Research Centre for Physics, Hungarian Academy of Sciences
Verified email at wigner.mta.hu - Homepage
TitleCited byYear
A silicon carbide room-temperature single-photon source
S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ...
Nature materials 13 (2), 151, 2014
3452014
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
3282011
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164, 2015
2872015
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
A Gali, M Fyta, E Kaxiras
Physical Review B 77 (15), 155206, 2008
2832008
Electrically driven single-photon source at room temperature in diamond
N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ...
Nature photonics 6 (5), 299, 2012
2502012
Electronic structure of the silicon vacancy color center in diamond
C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ...
Physical Review Letters 112 (3), 036405, 2014
2212014
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
P Deák, B Aradi, T Frauenheim, E Janzén, A Gali
Physical Review B 81 (15), 153203, 2010
2102010
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
2062011
Molecular-sized fluorescent nanodiamonds
II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ...
Nature nanotechnology 9 (1), 54, 2014
1932014
Divacancy in 4H-SiC
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
1852006
Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR
G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ...
Physical review letters 106 (15), 157601, 2011
1592011
Theoretical study of the mechanism of dry oxidation of 4 H-SiC
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 71 (23), 235321, 2005
1552005
Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures
P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup
Physical review letters 110 (16), 167402, 2013
1532013
Defects in as the possible origin of near interface traps in the system: A systematic theoretical study
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical review B 72 (11), 115323, 2005
1522005
Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
A Gali
Physical Review B 73 (24), 245415, 2006
1502006
The mechanism of defect creation and passivation at the SiC/SiO2 interface
P Deak, JM Knaup, T Hornos, C Thill, A Gali, T Frauenheim
Journal of Physics D: Applied Physics 40 (20), 6242, 2007
1362007
Theory of spin-conserving excitation of the N− V− center in diamond
A Gali, E Janzén, P Deák, G Kresse, E Kaxiras
Physical review letters 103 (18), 186404, 2009
1292009
13C hyperfine interactions in the nitrogen-vacancy centre in diamond
B Smeltzer, L Childress, A Gali
New Journal of Physics 13 (2), 025021, 2011
1132011
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali
Physical Review B 89 (7), 075203, 2014
1122014
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
B Aradi, A Gali, P Deák, JE Lowther, NT Son, E Janzén, WJ Choyke
Physical Review B 63 (24), 245202, 2001
1122001
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