Angelo Bongiorno
Angelo Bongiorno
City University New York, College of Staten Island and Georgia Tech
Verified email at
TitleCited byYear
Oligonucleotide-stabilized Ag nanocluster fluorophores
CI Richards, S Choi, JC Hsiang, Y Antoku, T Vosch, A Bongiorno, ...
Journal of the American Chemical Society 130 (15), 5038-5039, 2008
Room-temperature metastability of multilayer graphene oxide films
S Kim, S Zhou, Y Hu, M Acik, YJ Chabal, C Berger, W De Heer, ...
Nature materials 11 (6), 544, 2012
Bonding trends and dimensionality crossover of gold nanoclusters on metal-supported MgO thin films
D Ricci, A Bongiorno, G Pacchioni, U Landman
Physical review letters 97 (3), 036106, 2006
ISM masses and the star formation law at Z= 1 to 6: ALMA observations of dust continuum in 145 galaxies in the COSMOS survey field
N Scoville, K Sheth, H Aussel, PV Bout, P Capak, A Bongiorno, CM Casey, ...
The Astrophysical Journal 820 (2), 83, 2016
Water-enhanced catalysis of CO oxidation on free and supported gold nanoclusters
A Bongiorno, U Landman
Physical review letters 95 (10), 106102, 2005
Anomalous pseudocapacitive behavior of a nanostructured, mixed-valent manganese oxide film for electrical energy storage
MK Song, S Cheng, H Chen, W Qin, KW Nam, S Xu, XQ Yang, ...
Nano letters 12 (7), 3483-3490, 2012
Origin of the chemical and kinetic stability of graphene oxide
S Zhou, A Bongiorno
Scientific reports 3, 2484, 2013
Transition Structure at the Interface
A Bongiorno, A Pasquarello, MS Hybertsen, LC Feldman
Physical review letters 90 (18), 186101, 2003
Evolution of interstellar medium, star formation, and accretion at high redshift
N Scoville, N Lee, PV Bout, T Diaz-Santos, D Sanders, B Darvish, ...
The Astrophysical Journal 837 (2), 150, 2017
Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation
A Bongiorno, A Pasquarello
Physical Review B 70 (19), 195312, 2004
Oxygen diffusion through the disordered oxide network during silicon oxidation
A Bongiorno, A Pasquarello
Physical review letters 88 (12), 125901, 2002
Reaction of the Oxygen Molecule at the S i (100)− S i O 2 Interface During Silicon Oxidation
A Bongiorno, A Pasquarello
Physical review letters 93 (8), 086102, 2004
Dielectric constants of Zr silicates: a first-principles study
GM Rignanese, F Detraux, X Gonze, A Bongiorno, A Pasquarello
Physical review letters 89 (11), 117601, 2002
Validity of the bond-energy picture for the energetics at Si− SiO 2 interfaces
A Bongiorno, A Pasquarello
Physical Review B 62 (24), R16326, 2000
Atomistic structure of the interface: A synthesis of experimental data
A Bongiorno, A Pasquarello
Applied physics letters 83 (7), 1417-1419, 2003
Structural and binding properties of vacancy clusters in silicon
A Bongiorno, L Colombo, TD De la Rubia
EPL (Europhysics Letters) 43 (6), 695, 1998
A perspective on modeling materials in extreme environments: oxidation of ultrahigh-temperature ceramics
A Bongiorno, CJ Först, RK Kalia, J Li, J Marschall, A Nakano, MM Opeka, ...
Mrs Bulletin 31 (5), 410-418, 2006
Atomistic models of the Si (100)–SiO2 interface: structural, electronic and dielectric properties
F Giustino, A Bongiorno, A Pasquarello
Journal of Physics: Condensed Matter 17 (21), S2065, 2005
Evolution of energetics and bonding of compact self-interstitial clusters in Si
A Bongiorno, L Colombo, F Cargnoni, C Gatti, M Rosati
EPL (Europhysics Letters) 50 (5), 608, 2000
Ultrahard carbon film from epitaxial two-layer graphene
Y Gao, T Cao, F Cellini, C Berger, WA De Heer, E Tosatti, E Riedo, ...
Nature nanotechnology 13 (2), 133, 2018
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