| Immobilization of streptavidin on 4H–SiC for biosensor development EH Williams, AV Davydov, A Motayed, SG Sundaresan, P Bocchini, ... Applied surface science 258 (16), 6056-6063, 2012 | 133 | 2012 |
| Microwave dielectric heating of fluids in an integrated microfluidic device JJ Shah, SG Sundaresan, J Geist, DR Reyes, JC Booth, MV Rao, ... Journal of Micromechanics and Microengineering 17 (11), 2224, 2007 | 114 | 2007 |
| Growth of silicon carbide nanowires by a microwave heating-assisted physical vapor transport process using group VIII metal catalysts SG Sundaresan, AV Davydov, MD Vaudin, I Levin, JE Maslar, YL Tian, ... Chemistry of Materials 19 (23), 5531-5537, 2007 | 86 | 2007 |
| 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes SG Sundaresan, C Sturdevant, M Marripelly, E Lieser, R Singh Materials Science Forum 717, 949-952, 2012 | 51 | 2012 |
| Microwave annealing of Mg-implanted and in situ Be-doped GaN GS Aluri, M Gowda, NA Mahadik, SG Sundaresan, MV Rao, JA Schreifels, ... Journal of Applied Physics 108 (8), 2010 | 49 | 2010 |
| Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap SG Sundaresan, NA Mahadik, SB Qadri, JA Schreifels, YL Tian, Q Zhang, ... Solid-State Electronics 52 (1), 140-145, 2008 | 49 | 2008 |
| Ultrahigh-temperature microwave annealing of Al+-and P+-implanted 4H-SiC SG Sundaresan, MV Rao, Y Tian, MC Ridgway, JA Schreifels, ... Journal of applied physics 101 (7), 2007 | 47 | 2007 |
| Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPE A Usikov, O Kovalenkov, V Soukhoveev, V Ivantsov, A Syrkin, V Dmitriev, ... physica status solidi c 5 (6), 1829-1831, 2008 | 42 | 2008 |
| Fulfilling the promise of high-temperature operation with silicon carbide devices: Eliminating bulky thermal-management systems with SJTs R Singh, S Sundaresan IEEE Power Electronics Magazine 2 (1), 27-35, 2015 | 39 | 2015 |
| Substrate-dependent orientation and polytype control in SiC nanowires grown on 4H-SiC substrates B Krishnan, RVKG Thirumalai, Y Koshka, S Sundaresan, I Levin, ... Crystal growth & design 11 (2), 538-541, 2011 | 39 | 2011 |
| Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC SG Sundaresan, MV Rao, Y Tian, JA Schreifels, MC Wood, KA Jones, ... Journal of electronic materials 36, 324-331, 2007 | 39 | 2007 |
| 1200 V SiC “Super” Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications R Singh, S Sundaresan, E Lieser, M Digangi 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012 | 30 | 2012 |
| 10 kV SiC BJTs—Static, switching and reliability characteristics S Sundaresan, S Jeliazkov, B Grummel, R Singh 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 29 | 2013 |
| Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps SG Sundaresan, M Murthy, MV Rao, JA Schreifels, MA Mastro, CR Eddy, ... Semiconductor science and technology 22 (10), 1151, 2007 | 24 | 2007 |
| Characterization of the stability of current gain and avalanche-mode operation of 4H-SiC BJTs SG Sundaresan, AM Soe, S Jeliazkov, R Singh IEEE Transactions on Electron Devices 59 (10), 2795-2802, 2012 | 21 | 2012 |
| 4H-SiC epitaxy with very smooth surface and low basal plane dislocation on 4 degree off-axis wafer GY Chung, MJ Loboda, J Zhang, JW Wan, EP Carlson, TJ Toth, ... Materials Science Forum 679, 123-126, 2011 | 21 | 2011 |
| Temperature control of microfluidic systems by microwave heating S Sundaresan, BJ Polk, D Reyes-Hernandez, M Rao, M Gaitan Siddarth Sundaresan, Brian J. Polk, Darwin Reyes-Hernandez, M Rao, Michael …, 2005 | 18 | 2005 |
| Short circuit robustness of 1200 V SiC switches R Singh, B Grummel, S Sundaresan 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 17 | 2015 |
| Large area> 8 kV SiC GTO thyristors with innovative anode-gate designs SG Sundaresan, H Issa, D Veeredy, R Singh Materials Science Forum 645, 1021-1024, 2010 | 17 | 2010 |
| Rapidly maturing SiC junction transistors featuring current gain (β)> 130, blocking voltages up to 2700 V and stable long-term operation SG Sundaresan, S Jeliazkov, B Grummel, R Singh Materials Science Forum 778, 1001-1004, 2014 | 16 | 2014 |
