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Junghwan Kim
Junghwan Kim
Graduate School of Semiconductor Materials & Devices Engineering, UNIST
Verified email at unist.ac.kr - Homepage
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Cited by
Cited by
Year
Lead‐free highly efficient blue‐emitting Cs3Cu2I5 with 0D electronic structure
T Jun, K Sim, S Iimura, M Sasase, H Kamioka, J Kim, H Hosono
Advanced Materials 30 (43), 1804547, 2018
5502018
Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
J Sheng, TH Hong, HM Lee, KR Kim, M Sasase, J Kim, H Hosono, ...
ACS applied materials & interfaces 11 (43), 40300-40309, 2019
2192019
Mobility–stability trade-off in oxide thin-film transistors
YS Shiah, K Sim, Y Shi, K Abe, S Ueda, M Sasase, J Kim, H Hosono
Nature Electronics, 800-807, 2021
1352021
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs
H Hosono, J Kim, Y Toda, T Kamiya, S Watanabe
Proceedings of the National Academy of Sciences 114 (2), 233-238, 2017
1332017
Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors
A Liu, H Zhu, MG Kim, J Kim, YY Noh
Advanced Science 8 (14), 2100546, 2021
1112021
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor
Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto ...
NPG Asia Materials, e359, 2017
1102017
Performance boosting strategy for perovskite light-emitting diodes
K Sim, T Jun, J Bang, H Kamioka, J Kim, H Hiramatsu, H Hosono
Applied Physics Reviews 6 (3), 2019
1062019
Exploration of stable strontium phosphide-based electrides: theoretical structure prediction and experimental validation
J Wang, K Hanzawa, H Hiramatsu, J Kim, N Umezawa, K Iwanaka, T Tada, ...
Journal of the American Chemical Society 139 (44), 15668-15680, 2017
862017
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
J Kim, J Bang, N Nakamura, H Hosono
APL Materials 7 (2), 2019
852019
A Highly Efficient and Stable Blue‐Emitting Cs5Cu3Cl6I2 with a 1D Chain Structure
J Li, T Inoshita, T Ying, A Ooishi, J Kim, H Hosono
Advanced Materials 32 (37), 2002945, 2020
842020
One-step solution synthesis of white-light-emitting films via dimensionality control of the Cs–Cu–I system
T Jun, T Handa, K Sim, S Iimura, M Sasase, J Kim, Y Kanemitsu, ...
APL Materials 7 (11), 2019
832019
Material Design of p‐Type Transparent Amorphous Semiconductor, Cu–Sn–I
T Jun, J Kim, M Sasase, H Hosono
Advanced Materials 30 (12), 1706573, 2018
822018
High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 ░C: Roles of Hydrogen andá…
CH Choi, T Kim, S Ueda, YS Shiah, H Hosono, J Kim, JK Jeong
ACS Applied Materials & Interfaces, 2021
372021
Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification
B Wan, Y Lu, Z Xiao, Y Muraba, J Kim, D Huang, L Wu, H Gou, J Zhang, ...
npj Computational Materials 4 (1), 77, 2018
372018
Chemical design and example of transparent bipolar semiconductors
T Arai, S Iimura, J Kim, Y Toda, S Ueda, H Hosono
Journal of the American Chemical Society 139 (47), 17175-17180, 2017
372017
Unintended carbon-related impurity and negative bias instability in high-mobility oxide TFTs
YS Shiah, K Sim, S Ueda, J Kim, H Hosono
IEEE Electron Device Letters 42 (9), 1319-1322, 2021
342021
Highly dense and stable p-type thin-film transistor based on atomic layer deposition SnO fabricated by two-step crystallization
HM Kim, SH Choi, HJ Jeong, JH Lee, J Kim, JS Park
ACS Applied Materials & Interfaces 13 (26), 30818-30825, 2021
282021
Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
N On, BK Kim, Y Kim, EH Kim, JH Lim, H Hosono, J Kim, H Yang, ...
Scientific reports 10 (1), 18868, 2020
282020
Zeolitic intermetallics: lnnisi (ln= la–nd)
H Mizoguchi, SW Park, K Kishida, M Kitano, J Kim, M Sasase, T Honda, ...
Journal of the American Chemical Society 141 (8), 3376-3379, 2019
282019
High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure
J Kim, YS Shiah, K Sim, S Iimura, K Abe, M Tsuji, M Sasase, H Hosono
Advanced Science, 2104993, 2021
242021
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