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Vitaly Alperovich
Vitaly Alperovich
Institute semiconductor physics, Novosibirsk, Russia
Verified email at isp.nsc.ru
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Cited by
Cited by
Year
Surface passivation and morphology of GaAs (1 0 0) treated in HCl-isopropanol solution
VL Alperovich, OE Tereshchenko, NS Rudaya, DV Sheglov, AV Latyshev, ...
Applied Surface Science 235 (3), 249-259, 2004
972004
Surface photovoltaic effect in solids. Theory and experiment for interband transitions in gallium arsenide
V Al’perovich, V Belinicher, V Novikov, A Terekhov
Zh Eksp Teor Fiz 80, 2298-2312, 1981
601981
Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance
VL Alperovich, AS Jaroshevich, HE Scheibler, AS Terekhov
Solid-state electronics 37 (4-6), 657-660, 1994
591994
The influence of phonons and impurities on the broadening of excitonic spectra in gallium arsenide
VL Alperovich, VM Zaletin, AF Kravchenko, AS Terekhov
physica status solidi (b) 77 (2), 465-472, 1976
591976
Domination of adatom-induced over defect-induced surface states on p-type GaAs (Cs, O) at room temperature
VL Alperovich, AG Paulish, AS Terekhov
Physical Review B 50 (8), 5480, 1994
471994
Photon-enhanced thermionic emission from p-GaAs with nonequilibrium Cs overlayers
AG Zhuravlev, AS Romanov, VL Alperovich
Applied Physics Letters 105 (25), 2014
392014
Semiconductor surfaces with negative electron affinity
B VV, P AA, Z AG, S AN, A IO, T OE, A VL, S HE
e-Journal of Surface Science and Nanotechnology 5, 80-88, 2007
362007
Evolution of electronic properties at the p‐GaAs(Cs,O) surface during negative electron affinity state formation
VL Alperovich, AG Paulish, HE Scheibler, AS Terekhov
Applied physics letters 66 (16), 2122-2124, 1995
341995
Decrease in the bond energy of arsenic atoms on the GaAs (100)-(2× 4)/c (2× 8) surface due to the effect of adsorbed cesium
OE Tereshchenko, VL Alperovich, AS Terekhov
Journal of Experimental and Theoretical Physics Letters 79, 131-135, 2004
312004
New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate
VL Alperovich, YB Bolkhovityanov, AG Paulish, AS Terekhov
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1994
311994
Cesium-induced surface conversion: From As-rich to Ga-rich GaAs (001) at reduced temperatures
OE Tereshchenko, VL Alperovich, AG Zhuravlev, AS Terekhov, D Paget
Physical Review B 71 (15), 155315, 2005
302005
Surface photovoltaic effect in gallium arsenide
VL Alperovich, VI Belinicher, VN Novikov, AS Terekhov
ZhETF Pisma Redaktsiiu 31, 581-584, 1980
301980
Unpinned behavior of the electronic properties of a p-GaAs (Cs, O) surface at room temperature
VL Alperovich, AG Paulish, AS Terekhov
Surface science 331, 1250-1255, 1995
261995
Monte Carlo simulation of GaAs (0 0 1) surface smoothing in equilibrium conditions
DM Kazantsev, IO Akhundov, AN Karpov, NL Shwartz, VL Alperovich, ...
Applied Surface Science 333, 141-146, 2015
252015
Step-terraced morphology of GaAs (001) substrates prepared at quasiequilibrium conditions
VL Alperovich, IO Akhundov, NS Rudaya, DV Sheglov, EE Rodyakina, ...
Applied Physics Letters 94 (10), 2009
252009
Structural and electronic transformations at the Cs/GaAs (100) interface
OE Tereshchenko, VS Voronin, HE Scheibler, VL Alperovich, ...
Surface science 507, 51-56, 2002
252002
Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers
AG Zhuravlev, VL Alperovich
Applied Surface Science 395, 3-8, 2017
232017
Electron emission from GaAs (Cs, O): Transition from negative to positive effective affinity
AG Zhuravlev, VS Khoroshilov, VL Alperovich
Applied Surface Science 483, 895-900, 2019
222019
Diffusion and ordering of Cs adatoms on GaAs (001) studied by reflectance anisotropy spectroscopy
VL Alperovich, D Paget
Physical Review B 56 (24), R15565, 1997
201997
Composition and structure of chemically prepared GaAs (1 1 1) A and (1 1 1) B surfaces
OE Tereshchenko, VL Alperovich, AS Terekhov
Surface science 600 (3), 577-582, 2006
192006
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