Поклонский, Николай Александрович (NA Poklonski)
Поклонский, Николай Александрович (NA Poklonski)
Belarusian State University, Faculty of Physics, 4 Nezavisimosti Av., 220030 Minsk, Belarus
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Основы импедансной спектроскопии композитов
НА Поклонский, НИ Горбачук
Минск: БГУ, 2005
Magneto-optical transport properties of monolayer MoS2 on polar substrates
CV Nguyen, NN Hieu, NA Poklonski, VV Ilyasov, L Dinh, TC Phong, ...
Physical Review B 96 (12), 125411, 2017
Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations
HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu, NM Hung, VV Ilyasov, ...
Journal of Electronic Materials 47, 730-736, 2018
First-principles study of the structural and electronic properties of graphene/MoS2 interfaces
NN Hieu, HV Phuc, VV Ilyasov, ND Chien, NA Poklonski, N Van Hieu, ...
Journal of Applied Physics 122 (10), 2017
Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities
NA Poklonski, SA Vyrko, AG Zabrodskii
Physics of the Solid State 46, 1101-1106, 2004
Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design
NA Poklonski, SA Vyrko, AI Siahlo, ON Poklonskaya, SV Ratkevich, ...
Materials Research Express 6 (4), 042002, 2019
Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons
NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii
Semiconductors 40, 803-807, 2006
A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga
NA Poklonskii, SY Lopatin, AG Zabrodskii
Physics of the Solid State 42 (3), 441-449, 2000
First principles study of optical properties of molybdenum disulfide: From bulk to monolayer
NN Hieu, VV Ilyasov, TV Vu, NA Poklonski, HV Phuc, LTT Phuong, BD Hoi, ...
Superlattices and Microstructures 115, 10-18, 2018
Interaction of a graphene sheet with a ferromagnetic metal plate
AD Phan, NA Viet, NA Poklonski, LM Woods, CH Le
Physical Review B 86 (15), 155419 (5 pp.), 2012
Статистическая физика полупроводников
НА Поклонский, СА Вырко, СЛ Поденок
М.: КомКнига (УРСС), 2005
Electronic structure model of a metal-filled carbon nanotube
NA Poklonskii, EF Kislyakov, GG Fedoruk, SA Vyrko
Physics of the Solid State 42, 1966-1971, 2000
Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides
TV Vu, VTT Vi, HV Phuc, CV Nguyen, NA Poklonski, CA Duque, DP Rai, ...
Journal of Physics: Condensed Matter 33 (22), 225503, 2021
Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects
NA Poklonski, VF Stelmakh
physica status solidi (b) 117 (1), 93-99, 1983
Screening of electrostatic fields in semiconductors by multicharged defects
NA Poklonskii, VF Stelmakh, VD Tkachev, SV Voitikov
physica status solidi (b) 88 (2), K165-K168, 1978
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
NA Poklonski, SA Vyrko, AG Zabrodskii
Semiconductors 42, 1388-1394, 2008
Uniaxially deformed (5, 5) carbon nanotube: Structural transitions
NA Poklonski, EF Kislyakov, NN Hieu, SA Vyrko, AM Popov, YE Lozovik
Chemical Physics Letters 464 (4-6), 187-191, 2008
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
NA Poklonskii, AI Syaglo, G Biskupski
Semiconductors 33, 402-406, 1999
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck
Technical Physics 55, 1463-1471, 2010
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
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