Electron-hole recombination properties of In0. 5Ga0. 5As/GaAs quantum dot solar cells and the influence on the open circuit voltage G Jolley, HF Lu, L Fu, HH Tan, C Jagadish Applied Physics Letters 97 (12), 2010 | 70 | 2010 |
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells HF Lu, L Fu, G Jolley, HH Tan, SR Tatavarti, C Jagadish Applied Physics Letters 98 (18), 2011 | 56 | 2011 |
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells G Jolley, L Fu, HF Lu, HH Tan, C Jagadish Progress in Photovoltaics: Research and Applications 21 (4), 736-746, 2013 | 49 | 2013 |
A method of removing the valence band discontinuity in HgCdTe-based nBn detectors ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone Applied Physics Letters 105 (12), 2014 | 44 | 2014 |
Plasmonic quantum dot solar cells for enhanced infrared response H Feng Lu, S Mokkapati, L Fu, G Jolley, H Hoe Tan, C Jagadish Applied Physics Letters 100 (10), 2012 | 42 | 2012 |
Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 62 (3), 722-728, 2015 | 39 | 2015 |
Theoretical study of midwave infrared HgCdTe nBn detectors operating at elevated temperatures ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone Journal of Electronic Materials 44 (9), 3044-3055, 2015 | 38 | 2015 |
Effects of well thickness on the spectral properties of In0. 5Ga0. 5As∕ GaAs∕ Al0. 2Ga0. 8As quantum dots-in-a-well infrared photodetectors G Jolley, L Fu, HH Tan, C Jagadish Applied Physics Letters 92 (19), 2008 | 33 | 2008 |
Performance Modeling of Bandgap Engineered HgCdTe-Based nBn Infrared Detectors ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 61 (11), 3691-3698, 2014 | 30 | 2014 |
Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone Journal of Applied Physics 112 (9), 2012 | 29 | 2012 |
Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors G Jolley, L Fu, HH Tan, C Jagadish Applied Physics Letters 91 (17), 2007 | 25 | 2007 |
Two-color InGaAs∕ GaAs quantum dot infrared photodetectors by selective area interdiffusion L Fu, Q Li, P Kuffner, G Jolley, P Gareso, HH Tan, C Jagadish Applied Physics Letters 93 (1), 2008 | 17 | 2008 |
Heavy and light hole transport in nominally undoped GaSb substrates H Kala, GA Umana-Membreno, G Jolley, ND Akhavan, MA Patrashin, ... Applied Physics Letters 106 (3), 2015 | 14 | 2015 |
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells S Turner, S Mokkapati, G Jolley, L Fu, HH Tan, C Jagadish Optics Express 21 (103), A324-A335, 2013 | 13 | 2013 |
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors G Jolley, I McKerracher, L Fu, HH Tan, C Jagadish Journal of Applied Physics 111 (12), 2012 | 13 | 2012 |
Intrinsic broadening of the mobility spectrum of bulk n-type GaAs G Jolley, GA Umana-Membreno, ND Akhavan, J Antoszewski, L Faraone, ... New Journal of Physics 16 (11), 113033, 2014 | 11 | 2014 |
Selective intermixing of InGaAs/GaAs quantum dot infrared photodetectors I McKerracher, J Wong-Leung, G Jolley, L Fu, HH Tan, C Jagadish IEEE Journal of Quantum Electronics 47 (5), 577-590, 2011 | 11 | 2011 |
Properties of In0. 5Ga0. 5As/GaAs/Al0. 2Ga0. 8As quantum-dots-in-a-well infrared photodetectors G Jolley, L Fu, HH Tan, C Jagadish Journal of Physics D: Applied Physics 42 (9), 095101, 2009 | 8 | 2009 |
Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation ND Akhavan, G Jolley, GU Membreno, J Antoszewski, L Faraone COMMAD 2012, 67-68, 2012 | 7 | 2012 |
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors G Jolley, L Fu, HH Tan, C Jagadish Journal of Physics D: Applied Physics 41 (21), 215101, 2008 | 7 | 2008 |