Shashwat Anand
Title
Cited by
Cited by
Year
Mg alloying in SnTe facilitates valence band convergence and optimizes thermoelectric properties
A Banik, US Shenoy, S Anand, UV Waghmare, K Biswas
Chemistry of Materials 27 (2), 581-587, 2015
2752015
Phase boundary mapping to obtain n-type Mg3Sb2-based thermoelectrics
S Ohno, K Imasato, S Anand, H Tamaki, SD Kang, P Gorai, HK Sato, ...
Joule 2 (1), 141-154, 2018
1472018
Enhanced Thermoelectric Performance in 18‐Electron Nb0.8CoSb Half‐Heusler Compound with Intrinsic Nb Vacancies
K Xia, Y Liu, S Anand, GJ Snyder, J Xin, J Yu, X Zhao, T Zhu
Advanced Functional Materials 28 (9), 1705845, 2018
622018
High Thermoelectric Performance in SnTe–AgSbTe2 Alloys from Lattice Softening, Giant Phonon–Vacancy Scattering, and Valence Band Convergence
G Tan, S Hao, RC Hanus, X Zhang, S Anand, TP Bailey, AJE Rettie, X Su, ...
ACS Energy Letters 3 (3), 705-712, 2018
572018
Impact of Ni content on the thermoelectric properties of half-Heusler TiNiSn
Y Tang, X Li, LHJ Martin, EC Reyes, T Ivas, C Leinenbach, S Anand, ...
Energy & Environmental Science 11 (2), 311-320, 2018
562018
Thermoelectric Properties of Materials with Nontrivial Electronic Topology
K Pal, S Anand, U Waghmare, V
Journal of Materials Chemistry C, 2015
552015
A valence balanced rule for discovery of 18-electron half-Heuslers with defects
S Anand, K Xia, VI Hegde, U Aydemir, V Kocevski, T Zhu, C Wolverton, ...
Energy & Environmental Science 11 (6), 1480-1488, 2018
452018
Using 18-Electron Rule To Understand the Nominal 19-Electron Half-Heusler NbCoSb with Nb Vacancies
W Zeier, S Anand, L Huang, R He, H Zhang, Z Ren, C Wolverton, ...
Chemistry of Materials 29, 1210-1217, 2017
432017
Two-dimensional Rectangular and Honeycomb Lattices of NbN: Emergence of Piezoelectric and Photocatalytic Properties at Nano-scale
S Anand, K Thekeppat, UV Waghmare
Nano Letters, 2015
382015
High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe2
Z Huang, SA Miller, B Ge, M Yan, S Anand, T Wu, P Nan, Y Zhu, ...
Angewandte Chemie International Edition 56 (45), 14113-14118, 2017
352017
Heat capacity of Mg3Sb2, Mg3Bi2, and their alloys at high temperature
MT Agne, K Imasato, S Anand, K Lee, SK Bux, A Zevalkink, AJE Rettie, ...
Materials Today Physics 6, 83-88, 2018
312018
Short-range order in defective half-Heusler thermoelectric crystals
K Xia, P Nan, S Tan, Y Wang, B Ge, W Zhang, S Anand, X Zhao, ...
Energy & Environmental Science 12 (5), 1568-1574, 2019
302019
Temperature Dependent n‐Type Self Doping in Nominally 19‐Electron Half‐Heusler Thermoelectric Materials
S Anand, K Xia, T Zhu, C Wolverton, GJ Snyder
Advanced Energy Materials 8 (30), 1801409, 2018
292018
Double half-heuslers
S Anand, M Wood, Y Xia, C Wolverton, GJ Snyder
Joule 3 (5), 1226-1238, 2019
182019
Local ferroelectricity in thermoelectric SnTe above room temperature driven by competing phonon instabilities and soft resonant bonding
L Aggarwal, A Banik, S Anand, UV Waghmare, K Biswas, G Sheet
Journal of Materiomics 2 (2), 196-202, 2016
162016
The importance of phase equilibrium for doping efficiency: iodine doped PbTe
J Male, MT Agne, A Goyal, S Anand, IT Witting, V Stevanović, GJ Snyder
Materials Horizons 6 (7), 1444-1453, 2019
132019
The importance of the Mg–Mg interaction in Mg3Sb2–Mg3Bi2 shown through cation site alloying
M Wood, K Imasato, S Anand, J Yang, GJ Snyder
Journal of Materials Chemistry A 8 (4), 2033-2038, 2020
92020
Na Doping in PbTe: Solubility, Band Convergence, Phase Boundary Mapping, and Thermoelectric Properties
P Jood, JP Male, S Anand, Y Matsushita, Y Takagiwa, MG Kanatzidis, ...
Journal of the American Chemical Society 142 (36), 15464-15475, 2020
82020
On the Dopability of Semiconductors and Governing Material Properties
A Goyal, P Gorai, S Anand, ES Toberer, GJ Snyder, V Stevanovic
Chemistry of Materials 32 (11), 4467-4480, 2020
72020
Machine learning chemical guidelines for engineering electronic structures in half-heusler thermoelectric materials
MT Dylla, A Dunn, S Anand, A Jain, GJ Snyder
Research 2020, 2020
72020
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