|Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics|
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic engineering 109, 364-369, 2013
|Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy|
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
|Modified Percolation Model for Polycrystalline High-Gate Stack With Grain Boundary Defects|
N Raghavan, KL Pey, K Shubhakar, M Bosman
IEEE electron device letters 32 (1), 78-80, 2010
|High-κ dielectric breakdown in nanoscale logic devices–Scientific insight and technology impact|
N Raghavan, KL Pey, K Shubhakar
Microelectronics Reliability 54 (5), 847-860, 2014
|Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks|
N Raghavan, KL Pey, K Shubhakar, X Wu, WH Liu, M Bosman
2012 IEEE International Reliability Physics Symposium (IRPS), 6A. 1.1-6A. 1.11, 2012
|Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films|
A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 2854, 2018
|Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement|
KL Pey, N Raghavan, X Wu, W Liu, X Li, M Bosman, K Shubhakar, ...
Microelectronic engineering 88 (7), 1365-1372, 2011
|Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy|
R Thamankar, N Raghavan, J Molina, FM Puglisi, SJ O'Shea, ...
Journal of Applied Physics 119 (8), 084304, 2016
|New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks|
KL Pey, N Raghavan, X Li, WH Liu, K Shubhakar, X Wu, M Bosman
2010 IEEE International Reliability Physics Symposium, 354-363, 2010
|Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM|
A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
Microelectronics Reliability 64, 172-178, 2016
|Random telegraph noise in 2D hexagonal boron nitride dielectric films|
A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
Applied Physics Letters 112 (13), 133505, 2018
|The “buffering” role of high-к in post breakdown degradation immunity of advanced dual layer dielectric gate stacks|
N Raghavan, A Padovani, X Wu, K Shubhakar, M Bosman, L Larcher, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 3.1-5A. 3.8, 2013
|Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer|
K Shubhakar, N Raghavan, SS Kushvaha, M Bosman, ZR Wang, ...
Microelectronics Reliability 54 (9-10), 1712-1717, 2014
|CAFM based spectroscopy of stress-induced defects in HfO2with experimental evidence of the clustering model and metastable vacancy defect state|
A Ranjan, N Raghavan, K Shubhakar, R Thamankar, J Molina, SJ O'Shea, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7, 2016
|Nanoscale electrical and physical study of polycrystalline high-κ dielectrics and proposed reliability enhancement techniques|
K Shubhakar, KL Pey, SS Kushvaha, M Bosman, SJ O'Shea, N Raghavan, ...
2011 International Reliability Physics Symposium, GD. 1.1-GD. 1.6, 2011
|Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi …|
R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
Journal of Applied Physics 122 (2), 024301, 2017
|Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics|
A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018
|Functionality Demonstration of a High-Density 2.5 V Self-Aligned Split-Gate NVM Cell Embedded Into 40nm CMOS Logic Process for Automotive Microcontrollers|
LQ Luo, ZQ Teo, YJ Kong, FX Deng, JQ Liu, F Zhang, XS Cai, KM Tan, ...
2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016
|An overview of physical analysis of nanosize conductive path in ultrathin SiON and high-к gate dielectrics in nanoelectronic devices|
KL Pey, X Wu, WH Liu, X Li, N Raghavan, K Shubhakar, M Bosman
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
|40nm embedded self-aligned split-gate flash technology for high-density automotive microcontrollers|
D Shum, LQ Luo, YJ Kong, FX Deng, X Qu, ZQ Teo, JQ Liu, F Zhang, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017