Stefano Ambrogio
Stefano Ambrogio
IBM Research Almaden
Verified email at polimi.it
Title
Cited by
Cited by
Year
Equivalent-accuracy accelerated neural-network training using analogue memory
S Ambrogio, P Narayanan, H Tsai, RM Shelby, I Boybat, C Di Nolfo, ...
Nature 558 (7708), 60-67, 2018
4942018
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2412019
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on electron devices 61 (8), 2912-2919, 2014
1632014
Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM
S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016
1562016
Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses
S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
1492016
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
S Ambrogio, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 61 (7), 2378-2386, 2014
1162014
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini
Nanotechnology 24 (38), 384012, 2013
1072013
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014
1042014
Recent progress in analog memory-based accelerators for deep learning
H Tsai, S Ambrogio, P Narayanan, RM Shelby, GW Burr
Journal of Physics D: Applied Physics 51 (28), 283001, 2018
962018
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity
G Pedretti, V Milo, S Ambrogio, R Carboni, S Bianchi, A Calderoni, ...
Scientific reports 7 (1), 1-10, 2017
942017
True random number generation by variability of resistive switching in oxide-based devices
S Balatti, S Ambrogio, Z Wang, D Ielmini
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015
892015
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
S Ambrogio, S Balatti, S Choi, D Ielmini
Advanced Materials 26 (23), 3885-3892, 2014
882014
Ultrafast valley relaxation dynamics in monolayer probed by nonequilibrium optical techniques
S Dal Conte, F Bottegoni, EAA Pogna, D De Fazio, S Ambrogio, I Bargigia, ...
Physical Review B 92 (23), 235425, 2015
782015
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
Z Wang, S Ambrogio, S Balatti, D Ielmini
Frontiers in neuroscience 8, 438, 2015
752015
Physical unbiased generation of random numbers with coupled resistive switching devices
S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016
732016
Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ...
IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015
732015
Understanding switching variability and random telegraph noise in resistive RAM
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
Electron Devices Meeting (IEDM), 2013 IEEE International, 31.5. 1-31.5. 4, 2013
672013
Normally-off logic based on resistive switches—Part I: Logic gates
S Balatti, S Ambrogio, D Ielmini
IEEE Transactions on Electron Devices 62 (6), 1831-1838, 2015
642015
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity
V Milo, G Pedretti, R Carboni, A Calderoni, N Ramaswamy, S Ambrogio, ...
2016 IEEE International Electron Devices Meeting (IEDM), 16.8. 1-16.8. 4, 2016
622016
Set variability and failure induced by complementary switching in bipolar RRAM
S Balatti, S Ambrogio, DC Gilmer, D Ielmini
IEEE electron device letters 34 (7), 861-863, 2013
622013
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