Marco Mastrapasqua
Marco Mastrapasqua
Unknown affiliation
Verified email at ieee.org
TitleCited byYear
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 48 (12), 2842-2850, 2001
1402001
An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 50 (3), 802-808, 2003
1252003
Secondary Electron flash-a high performance, low power flash technology for 0.35/spl mu/m and below
JD Bude, M Mastrapasqua, MR Pinto, RW Gregor, PJ Kelley, RA Kohler, ...
International Electron Devices Meeting. IEDM Technical Digest, 279-282, 1997
1061997
Low field mobility of ultra-thin SOI N-and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs
D Esseni, M Mastrapasqua, GK Celler, FH Baumann, C Fiegna, L Selmi, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
902000
Observation of avalanche propagation by multiplication assisted diffusion in pn junctions
A Lacaita, M Mastrapasqua, M Ghioni, S Vanoli
Applied physics letters 57 (5), 489-491, 1990
651990
Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates
A Pacelli, P Palestri, M Mastrapasqua
IEEE Transactions on Electron Devices 49 (6), 1027-1033, 2002
622002
Characterization of tunneling current in ultra-thin gate oxide
A Ghetti, CT Liu, M Mastrapasqua, E Sangiorgi
Solid-State Electronics 44 (9), 1523-1531, 2000
622000
Impact ionization and distribution functions in sub-micron nMOSFET technologies
JD Bude, M Mastrapasqua
IEEE Electron Device Letters 16 (10), 439-441, 1995
621995
Light emitting logic devices based on real space transfer in complementary InGaAs/InAlAs heterostructures
S Luryi, M Mastrapasqua
Negative Differential Resistance and Instabilities in 2-D Semiconductors, 53-82, 1993
551993
An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs
D Esseni, M Mastrapasqua, C Fiegna, GK Celler, L Selmi, E Sangiorgi
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
452001
Verification of electron distributions in silicon by means of hot carrier luminescence measurements
L Selmi, M Mastrapasqua, DM Boulin, JD Bude, M Pavesi, E Sangiorgi, ...
IEEE Transactions on Electron Devices 45 (4), 802-808, 1998
451998
Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process
CA King, MR Frei, M Mastrapasqua, KK Ng, YO Kim, RW Johnson, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
441999
Non-volatile memory element for programmable logic applications and operational methods therefor
HIL Cong, JD Bude, M Mastrapasqua
US Patent 6,002,610, 1999
411999
Heterojunction bipolar transistor
MR Frei, CA King, Y Ma, M Mastrapasqua, KK Ng
US Patent 6,509,242, 2003
382003
Strong dependence of time resolution on detector diameter in single photon avalanche diodes
A Lacaita, M Mastrapasqua
Electronics Letters 26 (24), 2053-2054, 1990
331990
Thermal resistance in Si/sub 1-x/Ge/sub x/HBTs on bulk-Si and SOI substrates
P Palestri, A Pacelli, M Mastrapasqua
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001
322001
Method for erasing and programming memory devices
JD Bude, M Mastrapasqua
US Patent 6,011,722, 2000
312000
Light-emitting transistor based on real-space transfer: electrical and optical properties
M Mastrapasqua, S Luryi, F Capasso, AL Hutchinson, DL Sivco, AY Cho
IEEE Transactions on Electron Devices 40 (2), 250-258, 1993
311993
Multiterminal light-emitting logic device electrically reprogrammable between OR and NAND functions
M Mastrapasqua, S Luryi, GL Belenky, PA Garbinski, AY Cho, DL Sivco
IEEE Transactions on Electron Devices 40 (8), 1371-1377, 1993
211993
Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures
GL Belenky, PA Garbinski, S Luryi, M Mastrapasqua, AY Cho, RA Hamm, ...
Journal of applied physics 73 (12), 8618-8627, 1993
211993
The system can't perform the operation now. Try again later.
Articles 1–20