Jaroslaw Z. Domagala

Citée par

	Toutes	Depuis 2020
Citations	4058	1185
indice h	31	16
indice i10	127	37

260

130

195

199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024202513 11 33 20 50 47 84 116 94 100 145 91 108 125 114 122 135 149 204 185 130 143 238 184 204 223 200 183 244 247 86

Accès public

Tout afficher

30 articles

7 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Janusz SadowskiInstitute of Physics Polish Academy of Sciences OR Linnaeus University OR Lund UniversityAdresse e-mail validée de ensemble3.eu
Michał LeszczynskiAdresse e-mail validée de unipress.waw.pl
Wojciech PaszkowiczProfessor of Materials Science, Institute of Physics, WarsawAdresse e-mail validée de ifpan.edu.pl
Slawomir KretInstitute of Physics, Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Piotr DluzewskiInstitute of Phisics PASAdresse e-mail validée de ifpan.edu.pl
Marek GodlewskiInstytut Fizyki PANAdresse e-mail validée de ifpan.edu.pl
Roman MinikayevInstitute of Physics PAS, Warsaw Adresse e-mail validée de ifpan.edu.pl
Michal BockowskiInstitute of High Pressure Physics PASAdresse e-mail validée de unipress.waw.pl
Elżbieta GuziewiczInstitute of Physics Polish Academy of Sciences & Los Alamos National LaboratoryAdresse e-mail validée de ifpan.edu.pl
Robert CzerneckiInstitue of High Pressure Physics PASAdresse e-mail validée de unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Roland MathieuUppsala UniversityAdresse e-mail validée de angstrom.uu.se
P. SvedlindhUppsala UniversityAdresse e-mail validée de angstrom.uu.se
Maciej SawickiInstitute of Physics, Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Grzegorz KarczewskiInstytut Fizyki, Polska Akademia NaukAdresse e-mail validée de ifpan.edu.pl
Anna ReszkaInstitute of Physics Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Eliana KaminskaInstitute of Electron Technology, Institute of High Pressure PhysicsAdresse e-mail validée de unipress.waw.pl
Krzysztof DybkoInstitute of Physics, Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Tomasz DietlInstitute of Physics, Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Julita Smalc-Koziorowska, Julita SmalcInstitute of High Pressure Physics PASAdresse e-mail validée de unipress.waw.pl

Suivre

Jaroslaw Z. Domagala

Institute of Physics, Polish Academy of Science, Warsaw, Poland

Adresse e-mail validée de ifpan.edu.pl

Materials Science Crystallography Physics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Electrical and optical properties of NiO films deposited by magnetron sputtering. M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ... Optica Applicata 41 (2), 2011	131	2011
Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ... Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018	117	2018
Influence of defects on the lattice constant of GaMnAs J Sadowski, JZ Domagala Physical Review B 69 (7), 075206, 2004	108	2004
Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers J Sadowski, JZ Domagała, J Bak-Misiuk, S Koleśnik, M Sawicki, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000	89	2000
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs (100) substrates J Sadowski, R Mathieu, P Svedlindh, JZ Domagała, J Bak-Misiuk, ... Applied Physics Letters 78 (21), 3271-3273, 2001	84	2001
Observation of topological crystalline insulator surface states on (111)-oriented PbSnSe films CM Polley, P Dziawa, A Reszka, A Szczerbakow, R Minikayev, ... Physical Review B 89 (7), 075317, 2014	83	2014
The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ... Journal of crystal growth 169 (2), 235-242, 1996	80	1996
Postgrowth annealing of (Ga, Mn) As under As capping: An alternative way to increase TC M Adell, L Ilver, J Kanski, V Stanciu, P Svedlindh, J Sadowski, ... Applied Physics Letters 86 (11), 2005	79	2005
Effect of Mn interstitials on the lattice parameter of I Kuryliszyn-Kudelska, JZ Domagała, T Wojtowicz, X Liu, E Łusakowska, ... Journal of applied physics 95 (2), 603-608, 2004	76	2004
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Z Liliental-Weber, M Benamara, J Washburn, JZ Domagala, J Bak-Misiuk, ... Journal of electronic materials 30, 439-444, 2001	62	2001
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ... Crystal Research and Technology 47 (3), 321-328, 2012	52	2012
Monocrystalline ZnO films on GaN/Al2O3 by atomic layer epitaxy in gas flow K Kopalko, M Godlewski, JZ Domagala, E Lusakowska, R Minikayev, ... Chemistry of materials 16 (8), 1447-1450, 2004	52	2004
Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAsheterostructures O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ... Journal of Physics: Condensed Matter 16 (2), S1, 2003	52	2003
Lattice constant of doped semiconductor M Leszczyński, E Litwin-Staszewska, T Suski, J Bąk-Misiuk, J Domagała Acta Physica Polonica A 88 (5), 837-840, 1995	51	1995
Monocrystalline zinc oxide films grown by atomic layer deposition T Krajewski, G Łuka, B Witkowski, B Kowalski, K Kopalko, JZ Domagala, ... Thin Solid Films 518 (16), 4556-4559, 2010	48	2010
Thermal properties of CaNdAlO4 and SrLaAlO4 single crystals P Byszewski, J Domagała, J Fink-Finowicki, A Pajaczkowska Materials research bulletin 27 (4), 483-490, 1992	46	1992
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering M Kuball, JM Hayes, T Suski, J Jun, M Leszczynski, J Domagala, HH Tan, ... Journal of Applied Physics 87 (6), 2736-2741, 2000	44	2000
Thermal expansion of bulk and homoepitaxial GaN V Kirchner, H Heinke, D Hommel, JZ Domagala, M Leszczynski Applied Physics Letters 77 (10), 1434-1436, 2000	42	2000
Photoreflectance study of the fundamental optical properties of (Ga, Mn) As epitaxial films O Yastrubchak, J Żuk, H Krzyżanowska, JZ Domagala, T Andrearczyk, ... Physical Review B—Condensed Matter and Materials Physics 83 (24), 245201, 2011	41	2011
Structural properties of 10 μm thick InN grown on sapphire (0001) E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ... Superlattices and Microstructures 40 (4-6), 246-252, 2006	37	2006

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs