David Biegelsen
David Biegelsen
Xerox Palo Alto Research Center
Verified email at parc.com
Cited by
Cited by
Surface reconstructions of GaAs (100) observed by scanning tunneling microscopy
DK Biegelsen, RD Bringans, JE Northrup, LE Swartz
Physical Review B 41 (9), 5701, 1990
Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution
EH Poindexter, GJ Gerardi, ME Rueckel, PJ Caplan, NM Johnson, ...
Journal of Applied Physics 56 (10), 2844-2849, 1984
Luminescence studies of plasma-deposited hydrogenated silicon
RA Street, JC Knights, DK Biegelsen
Physical Review B 18 (4), 1880, 1978
Laser and electron-beam solid interactions and materials processing
JF Gibbons, LD Hess, TW Sigmon
Boston, Mass, Nov. 1980, 1981, 1980
Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires
HI Liu, DK Biegelsen, FA Ponce, NM Johnson, RFW Pease
Applied physics letters 64 (11), 1383-1385, 1994
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
M Stutzmann, DK Biegelsen, RA Street
Physical Review B 35 (11), 5666, 1987
Reconstructions of GaAs (1 1 1) surfaces observed by scanning tunneling microscopy
DK Biegelsen, RD Bringans, JE Northrup, LE Swartz
Physical Review Letters 65 (4), 452, 1990
Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
DB Fenner, DK Biegelsen, RD Bringans
Journal of Applied Physics 66 (1), 419-424, 1989
Defect states in doped and compensated a-Si: H
RA Street, DK Biegelsen, JC Knights
Physical Review B 24 (2), 969, 1981
Deuterium passivation of grain‐boundary dangling bonds in silicon thin films
NM Johnson, DK Biegelsen, MD Moyer
Applied Physics Letters 40 (10), 882-884, 1982
Hydrogen evolution and defect creation in amorphous Si: H alloys
DK Biegelsen, RA Street, CC Tsai, JC Knights
Physical Review B 20 (12), 4839, 1979
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied physics letters 43 (2), 195-197, 1983
Apparatus and method for using electrostatic force to cause fluid movement
SA Elrod, E Peeters, FE Torres, DK Biegelsen, JL Dunec, AG Bell
US Patent 7,147,763, 2006
Stretchable interconnects using stress gradient films
DK Biegelsen, D Fork, J Reich
US Patent 6,743,982, 2004
Luminescence and ESR studies of defects in hydrogenated amorphous silicon
RA Street, DK Biegelsen
Solid State Communications 33 (12), 1159-1162, 1980
Characteristic electronic defects at the Si‐SiO2 interface
NM Johnson, DK Biegelsen, MD Moyer, ST Chang, EH Poindexter, ...
Applied Physics Letters 43 (6), 563-565, 1983
Photoinduced defects in chalcogenide glasses
DK Biegelsen, RA Street
Physical Review Letters 44 (12), 803, 1980
Self‐limiting oxidation of Si nanowires
HI Liu, DK Biegelsen, NM Johnson, FA Ponce, RFW Pease
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
Initial stages of epitaxial growth of GaAs on (100) silicon
DK Biegelsen, FA Ponce, AJ Smith, JC Tramontana
Journal of applied physics 61 (5), 1856-1859, 1987
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
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