Francesco Bertazzi
Francesco Bertazzi
Assistant Professor, Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni
Verified email at polito.it
TitleCited byYear
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 10_1, 2013
2922013
A numerical study of Auger recombination in bulk InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 231118, 2010
882010
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
F Bertazzi, M Moresco, E Bellotti
Journal of Applied Physics 106 (6), 063718, 2009
832009
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 083709, 2007
822007
Numerical analysis of indirect Auger transitions in InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 011111, 2012
772012
Alloy scattering in AlGaN and InGaN: A numerical study
E Bellotti, F Bertazzi, M Goano
Journal of applied physics 101 (12), 123706, 2007
572007
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section
M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001
562001
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti
Applied Physics Letters 103 (8), 081106, 2013
462013
Simulation of quantum dot solar cells including carrier intersubband dynamics and transport
M Gioannini, AP Cedola, N Di Santo, F Bertazzi, F Cappelluti
IEEE Journal of Photovoltaics 3 (4), 1271-1278, 2013
422013
Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation
E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti
Solid-State Electronics 52 (11), 1796-1801, 2008
422008
Electron and hole transport in bulk ZnO: A full band monte carlo study
F Bertazzi, M Goano, E Bellotti
Journal of Electronic Materials 36 (8), 857-863, 2007
422007
Electron and hole transport in bulk ZnO: A full band monte carlo study
F Bertazzi, M Goano, E Bellotti
Journal of Electronic Materials 36 (8), 857-863, 2007
422007
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ...
physica status solidi (a) 212 (5), 947-953, 2015
402015
A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides
F Bertazzi, OA Peverini, M Goano, G Ghione, R Orta, R Tascone
IEEE transactions on microwave theory and techniques 50 (9), 2108-2114, 2002
392002
Role of defects in the thermal droop of InGaN-based light emitting diodes
C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ...
Journal of Applied Physics 119 (9), 094501, 2016
332016
A numerical study of carrier impact ionization in AlxGa1−xN
E Bellotti, F Bertazzi
Journal of Applied Physics 111 (10), 103711, 2012
312012
A numerical study of carrier impact ionization in AlxGa1−xN
E Bellotti, F Bertazzi
Journal of Applied Physics 111 (10), 103711, 2012
312012
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
M Calciati, M Goano, F Bertazzi, M Vallone, X Zhou, G Ghione, ...
AIP Advances 4 (6), 067118, 2014
302014
Theory of carriers transport in III-nitride materials: State of the art and future outlook
E Bellotti, F Bertazzi, S Shishehchi, M Matsubara, M Goano
IEEE Transactions on Electron Devices 60 (10), 3204-3215, 2013
272013
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors
M Moresco, F Bertazzi, E Bellotti
Journal of Applied Physics 106 (6), 063719, 2009
272009
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