Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 292 | 2013 |

A numerical study of Auger recombination in bulk InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 97 (23), 231118, 2010 | 88 | 2010 |

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model F Bertazzi, M Moresco, E Bellotti Journal of Applied Physics 106 (6), 063718, 2009 | 83 | 2009 |

Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and *ab initio* calculationsM Goano, F Bertazzi, M Penna, E Bellotti Journal of Applied Physics 102 (8), 083709, 2007 | 82 | 2007 |

Numerical analysis of indirect Auger transitions in InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 101 (1), 011111, 2012 | 77 | 2012 |

Alloy scattering in AlGaN and InGaN: A numerical study E Bellotti, F Bertazzi, M Goano Journal of applied physics 101 (12), 123706, 2007 | 57 | 2007 |

A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001 | 56 | 2001 |

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 081106, 2013 | 46 | 2013 |

Simulation of quantum dot solar cells including carrier intersubband dynamics and transport M Gioannini, AP Cedola, N Di Santo, F Bertazzi, F Cappelluti IEEE Journal of Photovoltaics 3 (4), 1271-1278, 2013 | 42 | 2013 |

Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti Solid-State Electronics 52 (11), 1796-1801, 2008 | 42 | 2008 |

Electron and hole transport in bulk ZnO: A full band monte carlo study F Bertazzi, M Goano, E Bellotti Journal of Electronic Materials 36 (8), 857-863, 2007 | 42 | 2007 |

Electron and hole transport in bulk ZnO: A full band monte carlo study F Bertazzi, M Goano, E Bellotti Journal of Electronic Materials 36 (8), 857-863, 2007 | 42 | 2007 |

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015 | 40 | 2015 |

A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides F Bertazzi, OA Peverini, M Goano, G Ghione, R Orta, R Tascone IEEE transactions on microwave theory and techniques 50 (9), 2108-2114, 2002 | 39 | 2002 |

Role of defects in the thermal droop of InGaN-based light emitting diodes C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ... Journal of Applied Physics 119 (9), 094501, 2016 | 33 | 2016 |

A numerical study of carrier impact ionization in Al_{x}Ga_{1−}_{x}NE Bellotti, F Bertazzi Journal of Applied Physics 111 (10), 103711, 2012 | 31 | 2012 |

A numerical study of carrier impact ionization in Al_{x}Ga_{1−}_{x}NE Bellotti, F Bertazzi Journal of Applied Physics 111 (10), 103711, 2012 | 31 | 2012 |

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues M Calciati, M Goano, F Bertazzi, M Vallone, X Zhou, G Ghione, ... AIP Advances 4 (6), 067118, 2014 | 30 | 2014 |

Theory of carriers transport in III-nitride materials: State of the art and future outlook E Bellotti, F Bertazzi, S Shishehchi, M Matsubara, M Goano IEEE Transactions on Electron Devices 60 (10), 3204-3215, 2013 | 27 | 2013 |

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors M Moresco, F Bertazzi, E Bellotti Journal of Applied Physics 106 (6), 063719, 2009 | 27 | 2009 |