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Jordan Greenlee
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Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45, 2031-2037, 2016
1432016
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE electron device letters 35 (8), 826-828, 2014
922014
On the radiation tolerance of AlGaN/GaN HEMTs
BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ...
ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016
852016
Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates
TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ...
IEEE Electron Device Letters 37 (1), 28-30, 2015
662015
Symmetric multicycle rapid thermal annealing: Enhanced activation of implanted dopants in GaN
JD Greenlee, BN Feigelson, TJ Anderson, JK Hite, KD Hobart, FJ Kub
ECS Journal of Solid State Science and Technology 4 (9), P382, 2015
612015
Selective p-type doping of GaN: Si by Mg ion implantation and multicycle rapid thermal annealing
MJ Tadjer, BN Feigelson, JD Greenlee, JA Freitas, TJ Anderson, JK Hite, ...
ECS Journal of Solid State Science and Technology 5 (2), P124, 2015
582015
Observation and control of the surface kinetics of InGaN for the elimination of phase separation
M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ...
Journal of Applied Physics 112 (1), 2012
522012
Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ...
Applied physics letters 107 (8), 2015
472015
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
JD Greenlee, BN Feigelson, TJ Anderson, MJ Tadjer, JK Hite, MA Mastro, ...
Journal of Applied Physics 116 (6), 2014
462014
In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO2 memristors
JD Greenlee, CF Petersburg, W Laws Calley, C Jaye, DA Fischer, ...
Applied Physics Letters 100 (18), 2012
422012
Improved vertical GaN Schottky diodes with ion implanted junction termination extension
TJ Anderson, JD Greenlee, BN Feigelson, JK Hite, FJ Kub, KD Hobart
ECS Journal of Solid State Science and Technology 5 (6), Q176, 2016
412016
Comparison of interfacial and bulk ionic motion in analog memristors
JD Greenlee, WL Calley, MW Moseley, WA Doolittle
IEEE Transactions on Electron Devices 60 (1), 427-432, 2012
412012
Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs
AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ...
IEEE Electron Device Letters 35 (12), 1194-1196, 2014
392014
Improvements in the annealing of Mg ion implanted GaN and related devices
TJ Anderson, JD Greenlee, BN Feigelson, JK Hite, KD Hobart, FJ Kub
ieee transactions on Semiconductor manufacturing 29 (4), 343-348, 2016
382016
Characterization of an Mg‐implanted GaN p–i–n diode
JD Greenlee, TJ Anderson, BN Feigelson, KD Hobart, FJ Kub
physica status solidi (a) 212 (12), 2772-2775, 2015
382015
Impact of surface passivation on the dynamic on-resistance of proton-irradiated AlGaN/GaN HEMTs
AD Koehler, TJ Anderson, MJ Tadjer, BD Weaver, JD Greenlee, ...
IEEE Electron Device Letters 37 (5), 545-548, 2016
352016
Ultraviolet detector based on graphene/SiC heterojunction
TJ Anderson, KD Hobart, JD Greenlee, DI Shahin, AD Koehler, MJ Tadjer, ...
Applied Physics Express 8 (4), 041301, 2015
352015
Halide based MBE of crystalline metals and oxides
JD Greenlee, WL Calley, W Henderson, WA Doolittle
physica status solidi c 9 (2), 155-160, 2012
292012
Characterization of a selective AlN wet etchant
JD Greenlee, TJ Anderson, BN Feigelson, AD Koehler, KD Hobart, FJ Kub
Applied Physics Express 8 (3), 036501, 2015
232015
Spatial mapping of pristine and irradiated AlGaN/GaN HEMTs with UV single-photon absorption single-event transient technique
A Khachatrian, NJH Roche, SP Buchner, AD Koehler, JD Greenlee, ...
IEEE Transactions on Nuclear Science 63 (4), 1995-2001, 2016
222016
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