Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus M Hatano, S Yamaguchi, Y Kimura, SK Park US Patent 6,756,614, 2004 | 105 | 2004 |
Thin film transistor S Yamaguchi, M Hatano, T Shiba, Y Kimura, SK Park US Patent 6,501,095, 2002 | 82 | 2002 |
Si (111)√ 3×√ 3-Au growing on a 7× 7 surface A Shibata, Y Kimura, K Takayanagi Surface science 273 (1-2), L430-L434, 1992 | 52 | 1992 |
In situ high-temperature STM study of the restructuring process on the Si (111) 7× 7 surface upon Ag deposition A Shibata, Y Kimura, K Takayanagi surface science 303 (1-2), 161-170, 1994 | 51 | 1994 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method … Y Taniguchi, M Matsumura, H Yamaguchi, M Nishitani, S Tsujikawa, ... US Patent 7,101,436, 2006 | 42 | 2006 |
On the restructured layer of the Si (111) 3× 3-Ag structure studied by scanning tunneling microscopy A Shibata, Y Kimura, K Takayanagi Surface science 275 (3), L697-L701, 1992 | 39 | 1992 |
Surfactant epitaxy of Si on Si (111) surface mediated by a Sn layer II. Critical step flow of the growth with and without mediate S Iwanari, Y Kimura, K Takayanagi Journal of crystal growth 119 (3-4), 241-247, 1992 | 38 | 1992 |
Optimum light intensity distribution for growing large Si grains by phase-modulated excimer-laser annealing M Jyumonji, Y Kimura, Y Taniguchi, M Hiramatsu, H Ogawa, ... Japanese journal of applied physics 43 (2R), 739, 2004 | 33 | 2004 |
Freezing of the 2× 1 structure at commensurate Ag (100) Si (100) interface Y Kimura, K Takayanagi Surface science 276 (1-3), 166-173, 1992 | 31 | 1992 |
Semiconductor device, annealing method, annealing apparatus and display apparatus M Jyumonji, M Matsumura, Y Kimura, M Nishitani, M Hiramatsu, ... US Patent 6,870,126, 2005 | 28 | 2005 |
Semiconductor device and method of manufacturing the same Y Kimura, N Sugii, S Kimura, R Tsuchiya, S Saito US Patent App. 11/249,681, 2006 | 27 | 2006 |
Semiconductor device having first, second and third non-crystalline films sequentially formed on insulating base with second film having thermal conductivity not lower than … Y Kimura, M Ohkura, T Shiba, T Kamo, Y Kaneko US Patent 6,452,213, 2002 | 25 | 2002 |
Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor … M Hiramatsu, Y Kimura, H Ogawa, M Jyumonji, M Matsumura US Patent 7,105,419, 2006 | 24 | 2006 |
Strained-silicon MOSFETs for analog applications: Utilizing a supercritical-thickness strained layer for low leakage current and high breakdown voltage M Kondo, N Sugii, M Miyamoto, Y Hoshino, M Hatori, W Hirasawa, ... IEEE transactions on electron devices 53 (5), 1226-1234, 2006 | 24 | 2006 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display Y Taniguchi, M Matsumura, H Yamaguchi, M Nishitani, S Tsujikawa, ... US Patent 7,011,709, 2006 | 23 | 2006 |
Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy N Sugii, K Nakagawa, Y Kimura, S Yamaguchi, M Miyao Japanese journal of applied physics 37 (3S), 1308, 1998 | 22 | 1998 |
Effect of atomic and molecular hydrogen irradiation on Ge surface segregation during Si molecular beam epitaxy K Nakagawa, A Nishida, YKY Kimura, TST Shimada Japanese journal of applied physics 33 (9B), L1331, 1994 | 21 | 1994 |
Liquid crystal display element and method of manufacturing the same T Tamura, K Ogata, Y Takahara, H Yamaguchi, Y Kimura, M Ohkura, ... US Patent 6,670,638, 2003 | 20 | 2003 |
Nonvolatile semiconductor memory device M Kinoshita, M Terao, H Matsuoka, Y Sasago, Y Kimura, A Shima, M Tai, ... US Patent App. 12/268,118, 2009 | 19 | 2009 |
Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus Y Yamamoto, M Nishitani, M Hiramatsu, M Jyumonji, Y Kimura US Patent 6,987,035, 2006 | 15 | 2006 |