Guido Langouche
Guido Langouche
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Cited by
Semiconducting Mg 2 Si thin films prepared by molecular-beam epitaxy
JE Mahan, A Vantomme, G Langouche, JP Becker
Physical Review B 54 (23), 16965, 1996
Direct evidence for tetrahedral interstitial Er in Si
U Wahl, A Vantomme, J De Wachter, R Moons, G Langouche, ...
Physical review letters 79 (11), 2069, 1997
Co silicide formation on SiGeC/Si and SiGe/Si layers
RA Donaton, K Maex, A Vantomme, G Langouche, Y Morciaux, ...
Applied physics letters 70 (10), 1266-1268, 1997
Thin film growth of semiconducting by codeposition
A Vantomme, JE Mahan, G Langouche, JP Becker, M Van Bael, K Temst, ...
Applied physics letters 70 (9), 1086-1088, 1997
Lattice location and stability of ion implanted Cu in Si
U Wahl, A Vantomme, G Langouche, JG Correia, ISOLDE collaboration
Physical review letters 84 (7), 1495, 2000
Concentration-controlled phase selection of silicide formation during reactive deposition
A Vantomme, S Degroote, J Dekoster, G Langouche, R Pretorius
Applied physics letters 74 (21), 3137-3139, 1999
Emission channeling studies of Pr in GaN
U Wahl, A Vantomme, G Langouche, JP Araújo, L Peralta, JG Correia, ...
Journal of Applied Physics 88 (3), 1319-1324, 2000
Mössbauer spectroscopy
Y Yoshida, G Langouche
Mössbauer Spectroscopy: Tutorial Book, 2013
Growth mechanism and optical properties of semiconducting Mg2Si thin films
A Vantomme, G Langouche, JE Mahan, JP Becker
Microelectronic engineering 50 (1-4), 237-242, 2000
Electron emission channeling with position-sensitive detectors
U Wahl, JG Correia, S Cardoso, JG Marques, A Vantomme, G Langouche
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
Epilayer-induced structural transition to bcc Co during epitaxial growth of Co/Fe superlattices
J Dekoster, E Jedryka, C Meny, G Langouche
EPL (Europhysics Letters) 22 (6), 433, 1993
Paramagnetism in Mn/Fe implanted ZnO
HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ...
Applied Physics Letters 97 (14), 142501, 2010
Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes?
MA Trauwaert, J Vanhellemont, HE Maes, AM Van Bavel, G Langouche, ...
Applied Physics Letters 66 (22), 3056-3057, 1995
Hyperfine interaction of defects in semiconductors
G Langouche
Elastic strain in layer: A combined x-ray diffraction and Rutherford backscattering/channeling study
MF Wu, A Vantomme, SM Hogg, G Langouche, W Van der Stricht, ...
Applied physics letters 74 (3), 365-367, 1999
Direct evidence for implanted Fe on substitutional Ga sites in GaN
U Wahl, A Vantomme, G Langouche, JG Correia, L Peralta, ...
Applied Physics Letters 78 (21), 3217-3219, 2001
Epitaxial growth of bcc Co/Fe superlattices
J Dekoster, E Jedryka, C Meny, G Langouche
Journal of magnetism and magnetic materials 121 (1-3), 69-72, 1993
Importance of channeled implantation to the synthesis of erbium silicide layers
MF Wu, A Vantomme, H Pattyn, G Langouche
Applied physics letters 67 (26), 3886-3888, 1995
Depth dependence of the tetragonal distortion of a GaN layer on Si (111) studied by Rutherford backscattering/channeling
MF Wu, CC Chen, DZ Zhu, S Zhou, A Vantomme, G Langouche, ...
Applied physics letters 80 (22), 4130-4132, 2002
Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantation
MF Wu, A Vantomme, G Langouche, K Maex, H Vanderstraeten, ...
Applied physics letters 57 (19), 1973-1975, 1990
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