| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1060 | 2018 |
| Investigating the stability of zinc oxide thin film transistors RBM Cross, MM De Souza Applied physics letters 89 (26), 2006 | 381 | 2006 |
| A low temperature combination method for the production of ZnO nanowires RBM Cross, MM De Souza, EMS Narayanan Nanotechnology 16 (10), 2188, 2005 | 246 | 2005 |
| Nanoionics-based three-terminal synaptic device using zinc oxide P Balakrishna Pillai, MM De Souza ACS Applied Materials & Interfaces 9 (2), 1609-1618, 2017 | 145 | 2017 |
| Surface intercalation of gold underneath a graphene monolayer on SiC (0001) studied by scanning tunneling microscopy and spectroscopy B Premlal, M Cranney, F Vonau, D Aubel, D Casterman, MM De Souza, ... Applied Physics Letters 94 (26), 2009 | 137 | 2009 |
| A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators RBM Cross, MM De Souza, SC Deane, ND Young IEEE Transactions on Electron Devices 55 (5), 1109-1115, 2008 | 116 | 2008 |
| Diffusion-controlled faradaic charge storage in high-performance solid electrolyte-gated zinc oxide thin-film transistors P Balakrishna Pillai, A Kumar, X Song, MM De Souza ACS applied materials & interfaces 10 (11), 9782-9791, 2018 | 58 | 2018 |
| Communication: Electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations P Umari, O Petrenko, S Taioli, MM De Souza The Journal of chemical physics 136 (18), 2012 | 52 | 2012 |
| High-Efficiency Modes Contiguous With Class B/J and Continuous Class F Amplifiers N Poluri, MM De Souza IEEE Microwave and Wireless Components Letters 29 (2), 137-139, 2019 | 48 | 2019 |
| The effect of gate-bias stress and temperature on the performance of ZnO thin-film transistors RBM Cross, MM De Souza IEEE Transactions on Device and Materials Reliability 8 (2), 277-282, 2008 | 46 | 2008 |
| A high performance RF LDMOSFET in thin film SOI technology with step drift profile J Luo, G Cao, SNE Madathil, MM De Souza Solid-State Electronics 47 (11), 1937-1941, 2003 | 46 | 2003 |
| Innovation in power semiconductor industry: Past and future NA Moguilnaia, KV Vershinin, MR Sweet, OI Spulber, MM De Souza, ... IEEE Transactions on Engineering Management 52 (4), 429-439, 2005 | 44 | 2005 |
| A novel double RESURF LDMOS for HVIC's S Hardikar, MM De Souza, YZ Xu, TJ Pease, EMS Narayanan Microelectronics Journal 35 (3), 305-310, 2004 | 42 | 2004 |
| Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors MM De Souza, S Jejurikar, KP Adhi Applied Physics Letters 92 (9), 2008 | 41 | 2008 |
| Comparative study of drift region designs in RF LDMOSFETs G Cao, SK Manhas, EMS Narayanan, MM De Souza, D Hinchley IEEE Transactions on Electron Devices 51 (8), 1296-1303, 2004 | 39 | 2004 |
| Experimental evidence for exciton scaling effects in self-assembled molecular wires PG Lagoudakis, MM De Souza, F Schindler, JM Lupton, J Feldmann, ... Physical review letters 93 (25), 257401, 2004 | 35 | 2004 |
| Design for reliability: the RF power LDMOSFET MM De Souza, P Fioravanti, G Cao, D Hinchley IEEE Transactions on Device and Materials Reliability 7 (1), 162-174, 2007 | 33 | 2007 |
| Electronic properties of extended graphene nanomaterials from GW calculations S Taioli, P Umari, MM De Souza Physica status solidi (b) 246 (11‐12), 2572-2576, 2009 | 31 | 2009 |
| Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET) F Udrea, UNK Udugampola, K Sheng, RA McMahon, GAJ Amaratunga, ... IEEE Electron Device Letters 23 (12), 725-727, 2002 | 31 | 2002 |
| Double resurf technology for HVICs MM De Souza, EMS Narayanan Electronics Letters 32 (12), 1092-1093, 1996 | 31 | 1996 |
