| Comparison of (001),(110) and (111) uniaxial-and biaxial-strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and … T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 86 | 2008 |
| Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers TV Dinh, A Valavanis, LJM Lever, Z Ikonić, RW Kelsall Physical Review B 85 (23), 235427, 2012 | 51 | 2012 |
| CMOS terahertz receivers Q Zhong, WY Choi, DY Kim, Z Ahmad, R Xu, Y Zhang, R Han, S Kshattry, ... 2018 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2018 | 33 | 2018 |
| Material configurations for n-type silicon-based terahertz quantum cascade lasers A Valavanis, TV Dinh, LJM Lever, Z Ikonić, RW Kelsall Physical Review B 83 (19), 195321, 2011 | 32 | 2011 |
| Investigation of the performance of strained-SiGe vertical IMOS-transistors TV Dinh, R Kraus, C Jungemann Solid-State Electronics 54 (9), 942-949, 2010 | 26 | 2010 |
| Impact ionization rates for strained Si and SiGe TV Dinh, C Jungemann Solid-state electronics 53 (12), 1318-1324, 2009 | 18 | 2009 |
| Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress TV Dinh, SM Hong, C Jungemann Solid-state electronics 60 (1), 58-64, 2011 | 16 | 2011 |
| IEEE Conference Proceedings of International Electron Devices Meeting (IEDM) T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ... IEEE conference proceedings of international electron devices meeting (IEDM …, 2008 | 12 | 2008 |
| Novel 5V-EDMOS transistor with a record/max of 450 GHz in a baseline 40nm CMOS technology TV Dinh, J Sonsky, J Claes, O Dieball, GT Sasse, C Detcheverry 2017 IEEE International Electron Devices Meeting (IEDM), 25.5. 1-25.5. 4, 2017 | 9 | 2017 |
| A.-t. Pham, B. Meinerzhagen, C. Jungemann, and K. Saraswat T Krishnamohan, D Kim, TV Dinh IEEE International Electron Devices Meeting, 2008. IEDM 2008, 1, 2008 | 9 | 2008 |
| Design of Lange Couplers with local ground references using SiGe BiCMOS technology for mm-Wave applications S Wane, L Leyssenne, O Tesson, O Doussin, D Bajon, D Lesénéchal, ... 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 351-354, 2015 | 8 | 2015 |
| Modeling and characterization of bond-wire arrays for distributed Chip-Package-PCB Co-design TV Dinh, D Lesénéchal, B Domengès, L Leyssenne, D Pasquet, ... 2015 European Microwave Conference (EuMC), 1022-1025, 2015 | 5 | 2015 |
| Novel alternating least squares algorithm for nonnegative matrix and tensor factorizations AH Phan, A Cichocki, R Zdunek, TV Dinh Neural Information Processing. Theory and Algorithms: 17th International …, 2010 | 5 | 2010 |
| An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage TV Dinh, T Vanhoucke, A Heringa, M Al-Sa'di, P Ivo, DBM Klaassen, ... 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 33-36, 2014 | 4 | 2014 |
| Germanium/silicon heterostructures for terahertz emission RW Kelsall, VT Dinh, P Ivanov, A Valavanis, LJM Lever, Z Ikonic, P Velha, ... ECS Transactions 50 (9), 763, 2013 | 4 | 2013 |
| Ectopic tubal pregnancy NV Hong, T Dinh Proceedings of the First Asiatic Congress on Obstetrics and Gynecology …, 1957 | 4 | 1957 |
| Mm-wave automotive radar: from evolution to revolution K Doris, F Jansen, M Lont, TV Dinh, W Syed, G Carluccio, LF Tiemeijer, ... 2021 IEEE International Electron Devices Meeting (IEDM), 25.7. 1-25.7. 4, 2021 | 3 | 2021 |
| Record high-performance RF devices in an advanced FDSOI process enabling integrated Watt-level power amplifiers for WiFi and 5G applications TV Dinh, BWC Hovens, M Vroubel, I Brunets, HP Tuinhout, LTF Tiemeijer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2019 | 3 | 2019 |
| The future of SiGe BiCMOS: Bipolar amplifiers for high-performance millimeter-wave applications P Magnée, D Leenaerts, M Van der Heijden, TV Dinh, I To, I Brunets 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 2 | 2021 |
| Integration of Lange Couplers in SiGe BiCMOS technology for RF and mm-Wave applications perspectives for distributed Chip-Package-PCB Co-integration S Wane, L Leyssenne, O Tesson, O Doussin, D Bajon, D Lesénéchal, ... 2015 European Microwave Conference (EuMC), 44-47, 2015 | 2 | 2015 |
