Raffaella Calarco

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Jos E. BoschkerFerdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikAdresse e-mail validée de alumnus.utwente.nl
Alessandro GiussaniSilanna SemiconductorAdresse e-mail validée de silanna.com
Stefano CecchiUniversity of Milano BicoccaAdresse e-mail validée de unimib.it
Valeria BragagliaIBM Research-Zurich (CH)Adresse e-mail validée de zurich.ibm.com
Fabrizio ArcipreteDepartment of Physics, University of Rome Tor VergataAdresse e-mail validée de roma2.infn.it
Eugenio ZalloWalter Schottky Institut and TUM School of Natural Sciences, Technische Universität MünchenAdresse e-mail validée de wsi.tum.de
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
B.J. KooiUniversity of GroningenAdresse e-mail validée de rug.nl
Paul FonsProfessor at Keio UniversityAdresse e-mail validée de keio.jp
Jamo MomandPhotonisAdresse e-mail validée de nl.photonis.com
Ratan DebnathNational Institute of Standards and Technology (NIST), Gaithersburg, USAAdresse e-mail validée de nist.gov
Antonio Massimiliano MioResearcher, Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiAdresse e-mail validée de imm.cnr.it
Christian RinaldiPolitecnico di MilanoAdresse e-mail validée de polimi.it
Riccardo BertaccoDipartimento di Fisica Politecnico di MilanoAdresse e-mail validée de polimi.it
Silvia PicozziDepartment of Materials Science, University Milan-Bicocca, ItalyAdresse e-mail validée de unimib.it
stefania priviteracataniaAdresse e-mail validée de cnr.it
Marcel A VerheijenEindhoven University of TechnologyAdresse e-mail validée de tue.nl
Markus MorgensternRWTH Aachen UniversityAdresse e-mail validée de physik.rwth-aachen.de
Marcus LiebmannRWTH Aachen UniversityAdresse e-mail validée de physik.rwth-aachen.de
Matthias WuttigProfessor für Physik, RWTH AachenAdresse e-mail validée de physik.rwth-aachen.de

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Raffaella Calarco

CNR-IMM

Adresse e-mail validée de cnr.it

growth and epitaxy semiconductors chalcogenides


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Size-dependent photoconductivity in MBE-grown GaN− nanowires R Calarco, M Marso, T Richter, AI Aykanat, R Meijers, A vd Hart, T Stoica, ... Nano letters 5 (5), 981-984, 2005	657	2005
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy R Calarco, RJ Meijers, RK Debnath, T Stoica, E Sutter, H Lüth Nano letters 7 (8), 2248-2251, 2007	330	2007
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) RK Debnath, R Meijers, T Richter, T Stoica, R Calarco, H Lüth Applied physics letters 90 (12), 2007	302	2007
Giant Rashba-type spin splitting in ferroelectric GeTe (111) M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ... Advanced Materials 28 (3), 560-565, 2016	209	2016
Photoluminescence and intrinsic properties of MBE-grown InN nanowires T Stoica, RJ Meijers, R Calarco, T Richter, E Sutter, H Lüth Nano letters 6 (7), 1541-1547, 2006	188	2006
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ... Small 4 (6), 751-754, 2008	187	2008
Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices J Momand, R Wang, JE Boschker, MA Verheijen, R Calarco, BJ Kooi Nanoscale 7 (45), 19136-19143, 2015	180	2015
Ferroelectric control of the spin texture in GeTe C Rinaldi, S Varotto, M Asa, J Sławińska, J Fujii, G Vinai, S Cecchi, ... Nano letters 18 (5), 2751-2758, 2018	165	2018
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	160	2014
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano letters 12 (12), 6119-6125, 2012	139	2012
Surface-induced effects in GaN nanowires R Calarco, T Stoica, O Brandt, L Geelhaar Journal of materials research 26 (17), 2157-2168, 2011	139	2011
MBE growth optimization of InN nanowires T Stoica, R Meijers, R Calarco, T Richter, H Lüth Journal of crystal growth 290 (1), 241-247, 2006	135	2006
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco Nanotechnology 22 (9), 095603, 2011	133	2011
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016	128	2016
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ... Nano Letters 6 (4), 704-708, 2006	126	2006
GaN-nanowhiskers: MBE-growth conditions and optical properties R Meijers, T Richter, R Calarco, T Stoica, HP Bochem, M Marso, H Lüth Journal of crystal growth 289 (1), 381-386, 2006	126	2006
Franz− Keldysh effect in GaN nanowires A Cavallini, L Polenta, M Rossi, T Stoica, R Calarco, RJ Meijers, T Richter, ... Nano letters 7 (7), 2166-2170, 2007	114	2007
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ... Journal of applied physics 105 (12), 2009	107	2009
Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ... Nano letters 14 (6), 3534-3538, 2014	95	2014
Robust topological surface states in SbTe layers as seen from the weak antilocalization effect Y Takagaki, A Giussani, K Perumal, R Calarco, KJ Friedland Physical Review B—Condensed Matter and Materials Physics 86 (12), 125137, 2012	94	2012

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