| Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-< formula>< img src= M Silvestri, MJ Uren, M Kuball IEEE, 0 | 185* | |
| Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section M Silvestri, MJ Uren, M Kuball Applied Physics Letters 102 (7), 2013 | 156 | 2013 |
| Intentionally carbon-doped AlGaN/GaN HEMTs: Necessity for vertical leakage paths MJ Uren, M Silvestri, M Cäsar, GAM Hurkx, JA Croon, J Šonský, M Kuball IEEE Electron Device Letters 35 (3), 327-329, 2014 | 148 | 2014 |
| Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 144 | 2007 |
| Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ... IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018 | 65 | 2018 |
| Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs Y Puzyrev, S Mukherjee, J Chen, T Roy, M Silvestri, RD Schrimpf, ... IEEE Transactions on Electron Devices 61 (5), 1316-1320, 2014 | 55 | 2014 |
| Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements M Silvestri, MJ Uren, N Killat, D Marcon, M Kuball Applied Physics Letters 103 (4), 2013 | 45 | 2013 |
| Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors M Huber, M Silvestri, L Knuuttila, G Pozzovivo, A Andreev, A Kadashchuk, ... Applied Physics Letters 107 (3), 2015 | 39 | 2015 |
| Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs A Kalavagunta, M Silvestri, MJ Beck, SK Dixit, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 56 (6), 3192-3195, 2009 | 39 | 2009 |
| Channel hot carrier stress on irradiated 130-nm NMOSFETs M Silvestri, S Gerardin, A Paccagnella, F Faccio, L Gonella IEEE Transactions on Nuclear Science 55 (4), 1960-1967, 2008 | 32 | 2008 |
| Development of custom radiation-tolerant DCDC converter ASICs F Faccio, S Michelis, S Orlandi, G Blanchot, C Fuentes, S Saggini, ... Journal of Instrumentation 5 (11), C11016, 2010 | 31 | 2010 |
| Neutron-induced soft errors in graphic processing units P Rech, C Aguiar, R Ferreira, M Silvestri, A Griffoni, C Frost, L Carro 2012 IEEE Radiation Effects Data Workshop, 1-6, 2012 | 26 | 2012 |
| Degradation induced by X-ray irradiation and channel hot carrier stresses in 130-nm NMOSFETs with enclosed layout M Silvestri, S Gerardin, A Paccagnella, F Faccio IEEE Transactions on Nuclear Science 55 (6), 3216-3223, 2008 | 26 | 2008 |
| The role of irradiation bias on the time-dependent dielectric breakdown of 130-nm MOSFETs exposed to X-rays M Silvestri, S Gerardin, RD Schrimpf, DM Fleetwood, F Faccio, ... IEEE Transactions on Nuclear Science 56 (6), 3244-3249, 2009 | 20 | 2009 |
| Gate rupture in ultra-thin gate oxides irradiated with heavy ions M Silvestri, S Gerardin, A Paccagnella, G Ghidini 2008 European Conference on Radiation and Its Effects on Components and …, 2008 | 19 | 2008 |
| Characterization of AlN/AlGaN/GaN: C heterostructures grown on Si (111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements M Huber, I Daumiller, A Andreev, M Silvestri, L Knuuttila, A Lundskog, ... Journal of Applied Physics 119 (12), 2016 | 17 | 2016 |
| Impact of Spacecraft-Shell Composition on 1 GeV/Nucleon Fe Ion-Fragmentation and Dose Reduction M Silvestri, E Tracino, M Briccarello, M Belluco, R Destefanis, C Lobascio, ... IEEE Transactions on Nuclear Science 58 (6), 3126-3133, 2011 | 16 | 2011 |
| Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions A Barbato, M Barbato, M Meneghini, M Silvestri, T Detzel, O Haeberlen, ... IET Power Electronics 13 (11), 2390-2397, 2020 | 14 | 2020 |
| Need for defects in floating-buffer AlGaN/GaN HEMTs MJ Uren, M Silvestri, M Caesar, JW Pomeroy, GAM Hurkx, JA Croon, ... Proc. CS-MANTECH, 317-319, 2014 | 14 | 2014 |
| Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs I Rossetto, F Rampazzo, M Meneghini, M Silvestri, C Dua, P Gamarra, ... Microelectronics Reliability 54 (9-10), 2248-2252, 2014 | 10 | 2014 |
Simone GerardinDipartimento di Ingegneria dell'Informazione - Università di PadovaVerified email at dei.unipd.it
