| Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology R Reiner, P Waltereit, B Weiss, S Moench, M Wespel, S Müller, R Quay, ... IET Power Electronics 11 (4), 681-688, 2018 | 52 | 2018 |
| Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT S Moench, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ... 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 37 | 2015 |
| PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors S Moench, R Reiner, P Waltereit, F Benkhelifa, J Hückelheim, D Meder, ... IEEE Transactions on Power Electronics 36 (1), 83-86, 2020 | 27 | 2020 |
| Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage M Basler, R Reiner, S Moench, P Waltereit, R Quay, I Kallfass, ... IEEE Electron Device Letters 41 (7), 993-996, 2020 | 27 | 2020 |
| Substrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-terminal characterization and modeling S Moench, C Salcines, R Li, Y Li, I Kallfass 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics …, 2017 | 26 | 2017 |
| Building blocks for GaN power integration M Basler, R Reiner, S Moench, F Benkhelifa, P Döring, P Waltereit, ... IEEE Access 9, 163122-163137, 2021 | 23 | 2021 |
| Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer S Moench, S Müller, R Reiner, P Waltereit, H Czap, M Basler, ... physica status solidi (a) 218 (3), 2000404, 2021 | 22 | 2021 |
| Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges S Moench, R Reiner, B Weiss, P Waltereit, R Quay, O Ambacher, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 21 | 2017 |
| A 600v gan-on-si power ic with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices S Moench, R Reiner, P Waltereit, J Hueckelheim, D Meder, R Quay, ... CIPS 2020; 11th International Conference on Integrated Power Electronics …, 2020 | 18 | 2020 |
| Integrated current sensing in GaN power ICs S Moench, R Reiner, P Waltereit, R Quay, O Ambacher, I Kallfass 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 18 | 2019 |
| Thin-film-based SAW magnetic field sensors JM Meyer, V Schell, J Su, S Fichtner, E Yarar, F Niekiel, T Giese, ... Sensors 21 (24), 8166, 2021 | 17 | 2021 |
| Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor S Moench, I Kallfass, R Reiner, B Weiss, P Waltereit, R Quay, ... 2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016 | 17 | 2016 |
| A 600V p-GaN gate HEMT with intrinsic freewheeling Schottky-diode in a GaN power IC with bootstrapped driver and sensors S Moench, R Reiner, P Waltereit, S Müller, R Quay, O Ambacher, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 15 | 2020 |
| Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 V GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scope S Moench, P Hillenbrand, P Hengel, I Kallfass 2017 IEEE 5th workshop on wide bandgap power devices and applications (WiPDA …, 2017 | 15 | 2017 |
| Sensitivity analysis of behavioral MOSFET models in transient EMC simulation P Hillenbrand, M Beltle, S Tenbohlen, S Mönch 2017 International Symposium on Electromagnetic Compatibility-EMC EUROPE, 1-6, 2017 | 14 | 2017 |
| Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications R Reiner, F Benkhelifa, S Moench, M Basler, P Waltereit, M Mikulla, ... PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021 | 12 | 2021 |
| Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges S Moench, R Reiner, P Waltereit, D Meder, M Basler, R Quay, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 12 | 2019 |
| Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs S Mönch, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 12 | 2015 |
| A GaN-based current sense amplifier for GaN HEMTs with integrated current shunts M Basler, S Moench, R Reiner, P Waltereit, R Quay, I Kallfass, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 11 | 2020 |
| Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology R Reiner, P Waltereit, S Moench, M Dammann, B Weiss, R Quay, ... 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 10 | 2018 |
Rudiger (Rüdiger) QuayFraunhofer IAF, Albert Ludwigs Universität FreiburgVerified email at ieee.org
