| Single-molecule resonance Raman effect in a plasmonic nanocavity RB Jaculbia, H Imada, K Miwa, T Iwasa, M Takenaka, B Yang, E Kazuma, ... Nature Nanotechnology 15 (2), 105-110, 2020 | 172 | 2020 |
| Orbital-resolved visualization of single-molecule photocurrent channels M Imai-Imada, H Imada, K Miwa, Y Tanaka, K Kimura, I Zoh, RB Jaculbia, ... Nature 603 (7903), 829-834, 2022 | 39 | 2022 |
| Chemical Identification and Bond Control of π-Skeletons in a Coupling Reaction C Zhang, RB Jaculbia, Y Tanaka, E Kazuma, H Imada, N Hayazawa, ... Journal of the American Chemical Society 143 (25), 9461-9467, 2021 | 31 | 2021 |
| Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures E Estacio, MH Pham, S Takatori, M Cadatal-Raduban, T Nakazato, ... Applied Physics Letters 94 (23), 2009 | 30 | 2009 |
| Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength J John Ibanes, H Balgos, R Jaculbia, A Salvador, A Somintac, E Estacio, ... Applied Physics Letters 102 (6), 2013 | 23 | 2013 |
| Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate MF Bailon-Somintac, JJ Ibañez, RB Jaculbia, RA Loberternos, ... Journal of crystal growth 314 (1), 268-273, 2011 | 11 | 2011 |
| True bulk As-antisite defect in GaAs (1 1 0) identified by DFT calculations and probed by STM/STS measurements MC Escaño, MH Balgos, TQ Nguyen, EA Prieto, E Estacio, A Salvador, ... Applied Surface Science 511, 145590, 2020 | 10 | 2020 |
| Position, orientation, and relative quantum yield ratio determination of fluorescent nanoemitters via combined laser scanning microscopy and polarization measurements LL Dasallas, RB Jaculbia, MV Balois, WO Garcia, N Hayazawa Optical Materials Express 8 (5), 1290-1304, 2018 | 9 | 2018 |
| Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation E Estacio, S Takatori, MH Pham, T Yoshioka, T Nakazato, ... Applied Physics B 103, 825-829, 2011 | 9 | 2011 |
| Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain CMN Mateo, JJ Ibañez, JG Fernando, JC Garcia, K Omambac, ... Journal of Applied Physics 104 (10), 2008 | 9 | 2008 |
| Photocarrier transport and carrier recombination efficiency in vertically aligned Si nanowire arrays synthesized via metal-assisted chemical etching J Muldera, NI Cabello, JC Ragasa, A Mabilangan, MH Balgos, R Jaculbia, ... Applied Physics Express 6 (8), 082101, 2013 | 8 | 2013 |
| Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers MH Balgos, R Jaculbia, EA Prieto, M Tani, E Estacio, A Salvador, ... Journal of Applied Physics 126 (23), 2019 | 7 | 2019 |
| Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields RB Jaculbia, MHM Balgos, NS Mangila IV, MAC Tumanguil, ES Estacio, ... Applied surface science 303, 241-244, 2014 | 7 | 2014 |
| Application of external tensile and compressive strain on a single layer In A s/G a A s quantum dot via epitaxial lift‐off KM Omambac, JG Porquez, J Afalla, D Vasquez, MHM Balgos, R Jaculbia, ... physica status solidi (b) 250 (8), 1632-1635, 2013 | 6 | 2013 |
| Charge carrier dynamics of GaAs/AlGaAs asymmetric double quantum wells at room temperature studied by optical pump terahertz probe spectroscopy J Afalla, K Ohta, S Tokonami, EA Prieto, GA Catindig, KC Gonzales, ... Japanese Journal of Applied Physics 56 (11), 111203, 2017 | 5 | 2017 |
| Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures S Takatori, PH Minh, E Estacio, M Cadatal-Raduban, T Nakazato, ... Optical Materials 32 (7), 776-779, 2010 | 5 | 2010 |
| Controlling the Resonance Raman Effect in Tip-Enhanced Raman Spectroscopy Using a Thin Insulating Film R Jaculbia, N Hayazawa, H Imada, Y Kim Applied Spectroscopy 74 (11), 1391-1397, 2020 | 4 | 2020 |
| Terahertz emission from aluminum-doped ZnO–nGaAs heterostructure investigated using reflection-mode terahertz time-domain spectroscopy RB Jaculbia, JM Abrenica, ES Estacio, AA Salvador, AS Somintac Applied Physics Express 8 (12), 122101, 2015 | 3 | 2015 |
| Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core–shell nanowires on Si (1 0 0) substrates MH Balgos, R Jaculbia, M Defensor, JP Afalla, JJ Ibañes, ... Journal of luminescence 155, 27-31, 2014 | 3 | 2014 |
| Terahertz Emission from GaAs Films on Si (100) and Si (111) Substrates grown by molecular beam epitaxy T Yoshioka, S Takatori, PH Minh, M Cadatal-Raduban, T Nakazato, ... Journal of Infrared, Millimeter, and Terahertz Waves 32, 418-425, 2011 | 3 | 2011 |
Arnel SalvadorNational Institute of PhysicsAdresse e-mail validée de nip.upd.edu.ph
