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Rafael Jaculbia
Rafael Jaculbia
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Single-molecule resonance Raman effect in a plasmonic nanocavity
RB Jaculbia, H Imada, K Miwa, T Iwasa, M Takenaka, B Yang, E Kazuma, ...
Nature Nanotechnology 15 (2), 105-110, 2020
1722020
Orbital-resolved visualization of single-molecule photocurrent channels
M Imai-Imada, H Imada, K Miwa, Y Tanaka, K Kimura, I Zoh, RB Jaculbia, ...
Nature 603 (7903), 829-834, 2022
392022
Chemical Identification and Bond Control of π-Skeletons in a Coupling Reaction
C Zhang, RB Jaculbia, Y Tanaka, E Kazuma, H Imada, N Hayazawa, ...
Journal of the American Chemical Society 143 (25), 9461-9467, 2021
312021
Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures
E Estacio, MH Pham, S Takatori, M Cadatal-Raduban, T Nakazato, ...
Applied Physics Letters 94 (23), 2009
302009
Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
J John Ibanes, H Balgos, R Jaculbia, A Salvador, A Somintac, E Estacio, ...
Applied Physics Letters 102 (6), 2013
232013
Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate
MF Bailon-Somintac, JJ Ibañez, RB Jaculbia, RA Loberternos, ...
Journal of crystal growth 314 (1), 268-273, 2011
112011
True bulk As-antisite defect in GaAs (1 1 0) identified by DFT calculations and probed by STM/STS measurements
MC Escaño, MH Balgos, TQ Nguyen, EA Prieto, E Estacio, A Salvador, ...
Applied Surface Science 511, 145590, 2020
102020
Position, orientation, and relative quantum yield ratio determination of fluorescent nanoemitters via combined laser scanning microscopy and polarization measurements
LL Dasallas, RB Jaculbia, MV Balois, WO Garcia, N Hayazawa
Optical Materials Express 8 (5), 1290-1304, 2018
92018
Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation
E Estacio, S Takatori, MH Pham, T Yoshioka, T Nakazato, ...
Applied Physics B 103, 825-829, 2011
92011
Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain
CMN Mateo, JJ Ibañez, JG Fernando, JC Garcia, K Omambac, ...
Journal of Applied Physics 104 (10), 2008
92008
Photocarrier transport and carrier recombination efficiency in vertically aligned Si nanowire arrays synthesized via metal-assisted chemical etching
J Muldera, NI Cabello, JC Ragasa, A Mabilangan, MH Balgos, R Jaculbia, ...
Applied Physics Express 6 (8), 082101, 2013
82013
Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers
MH Balgos, R Jaculbia, EA Prieto, M Tani, E Estacio, A Salvador, ...
Journal of Applied Physics 126 (23), 2019
72019
Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields
RB Jaculbia, MHM Balgos, NS Mangila IV, MAC Tumanguil, ES Estacio, ...
Applied surface science 303, 241-244, 2014
72014
Application of external tensile and compressive strain on a single layer In A s/G a A s quantum dot via epitaxial lift‐off
KM Omambac, JG Porquez, J Afalla, D Vasquez, MHM Balgos, R Jaculbia, ...
physica status solidi (b) 250 (8), 1632-1635, 2013
62013
Charge carrier dynamics of GaAs/AlGaAs asymmetric double quantum wells at room temperature studied by optical pump terahertz probe spectroscopy
J Afalla, K Ohta, S Tokonami, EA Prieto, GA Catindig, KC Gonzales, ...
Japanese Journal of Applied Physics 56 (11), 111203, 2017
52017
Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures
S Takatori, PH Minh, E Estacio, M Cadatal-Raduban, T Nakazato, ...
Optical Materials 32 (7), 776-779, 2010
52010
Controlling the Resonance Raman Effect in Tip-Enhanced Raman Spectroscopy Using a Thin Insulating Film
R Jaculbia, N Hayazawa, H Imada, Y Kim
Applied Spectroscopy 74 (11), 1391-1397, 2020
42020
Terahertz emission from aluminum-doped ZnO–nGaAs heterostructure investigated using reflection-mode terahertz time-domain spectroscopy
RB Jaculbia, JM Abrenica, ES Estacio, AA Salvador, AS Somintac
Applied Physics Express 8 (12), 122101, 2015
32015
Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core–shell nanowires on Si (1 0 0) substrates
MH Balgos, R Jaculbia, M Defensor, JP Afalla, JJ Ibañes, ...
Journal of luminescence 155, 27-31, 2014
32014
Terahertz Emission from GaAs Films on Si (100) and Si (111) Substrates grown by molecular beam epitaxy
T Yoshioka, S Takatori, PH Minh, M Cadatal-Raduban, T Nakazato, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 418-425, 2011
32011
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