W. Walukiewicz
W. Walukiewicz
Unknown affiliation
Verified email at lbl.gov
Title
Cited by
Cited by
Year
Band anticrossing in GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
18861999
Band anticrossing in GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
18861999
Unusual properties of the fundamental band gap of InN
J Wu, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, H Lu, WJ Schaff, ...
Applied Physics Letters 80 (21), 3967-3969, 2002
18222002
Small band gap bowing in alloys
J Wu, W Walukiewicz, KM Yu, JW Ager III, EE Haller, H Lu, WJ Schaff
Applied Physics Letters 80 (25), 4741-4743, 2002
7682002
Superior radiation resistance of alloys: Full-solar-spectrum photovoltaic material system
J Wu, W Walukiewicz, KM Yu, W Shan, JW Ager Iii, EE Haller, H Lu, ...
Journal of Applied Physics 94 (10), 6477-6482, 2003
7322003
Effect of the location of Mn sites in ferromagnetic on its Curie temperature
KM Yu, W Walukiewicz, T Wojtowicz, I Kuryliszyn, X Liu, Y Sasaki, ...
Physical Review B 65 (20), 201303, 2002
6422002
Observation of crystalline
KM Yu, ML Cohen, EE Haller, WL Hansen, AY Liu, IC Wu
Physical Review B 49 (7), 5034, 1994
6251994
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 123505, 2008
5682008
Intrinsic electron accumulation at clean InN surfaces
I Mahboob, TD Veal, CF McConville, H Lu, WJ Schaff
Physical review letters 92 (3), 036804, 2004
5682004
Electron mobility in modulation-doped heterostructures
W Walukiewicz, HE Ruda, J Lagowski, HC Gatos
Physical Review B 30 (8), 4571, 1984
5311984
Effects of the narrow band gap on the properties of InN
J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, H Lu, ...
Physical Review B 66 (20), 201403, 2002
5232002
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 143502, 2008
4682008
Temperature dependence of the fundamental band gap of InN
J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager Iii, SX Li, EE Haller, H Lu, ...
Journal of Applied Physics 94 (7), 4457-4460, 2003
4502003
Valence-band anticrossing in mismatched III-V semiconductor alloys
K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ...
Physical review B 75 (4), 045203, 2007
4122007
Band anticrossing in highly mismatched III–V semiconductor alloys
J Wu, W Shan, W Walukiewicz
Semiconductor Science and Technology 17 (8), 860, 2002
3702002
Intrinsic limitations to the doping of wide-gap semiconductors
W Walukiewicz
Physica B: Condensed Matter 302, 123-134, 2001
3702001
Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
J Lagowski, HC Gatos, JM Parsey, K Wada, M Kaminska, W Walukiewicz
Applied Physics Letters 40 (4), 342-344, 1982
3601982
Amphoteric native defects in semiconductors
W Walukiewicz
Applied physics letters 54 (21), 2094-2096, 1989
3551989
Band bowing and band alignment in InGaN alloys
PG Moses, CG Van de Walle
Applied Physics Letters 96 (2), 021908, 2010
3412010
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
P Chavarkar, IP Smorchkova, S Keller, U Mishra, W Walukiewicz, Y Wu
US Patent 6,849,882, 2005
3362005
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