| Fundamentals of surface and thin film analysis LC Feldman, JW Mayer (No Title), 1986 | 2148 | 1986 |
| Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux Academic Press, 2012 | 1670 | 2012 |
| GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984 | 1016 | 1984 |
| Electronic thin film science: for electrical engineers and materials scientists KN Tu, JW Mayer, LC Feldman (No Title), 1992 | 1013 | 1992 |
| Clustering on surfaces M Zinke-Allmang, LC Feldman, MH Grabow Surface Science Reports 16 (8), 377-463, 1992 | 825 | 1992 |
| Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ... IEEE Electron Device Letters 22 (4), 176-178, 2001 | 800 | 2001 |
| The analysis of 51 genes in DSM-IV combined type attention deficit hyperactivity disorder: association signals in DRD4, DAT1 and 16 other genes K Brookes, X Xu, W Chen, K Zhou, B Neale, N Lowe, R Aneey, B Franke, ... Molecular psychiatry 11 (10), 934-953, 2006 | 718 | 2006 |
| Equilibrium shape of Si DJ Eaglesham, AE White, LC Feldman, N Moriya, DC Jacobson Physical Review Letters 70 (11), 1643, 1993 | 653 | 1993 |
| Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ... Applied Physics Letters 76 (13), 1713-1715, 2000 | 596 | 2000 |
| Observation of long-range exciton diffusion in highly ordered organic semiconductors H Najafov, B Lee, Q Zhou, LC Feldman, V Podzorov Nature materials 9 (11), 938-943, 2010 | 577 | 2010 |
| Size effects in the structural phase transition of nanoparticles R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr Physical Review B 65 (22), 224113, 2002 | 450 | 2002 |
| Semiconductor to metal phase transition in the nucleation and growth of nanoparticles and thin films JY Suh, R Lopez, LC Feldman, RF Haglund Jr Journal of Applied Physics 96 (2), 1209-1213, 2004 | 434 | 2004 |
| Structurally induced optical transitions in Ge-Si superlattices TP Pearsall, J Bevk, LC Feldman, JM Bonar, JP Mannaerts, A Ourmazd Physical review letters 58 (7), 729, 1987 | 395 | 1987 |
| Homogeneously Alloyed CdSxSe1-x Nanocrystals: Synthesis, Characterization, and Composition/Size-Dependent Band Gap LA Swafford, LA Weigand, MJ Bowers, JR McBride, JL Rapaport, TL Watt, ... Journal of the American Chemical Society 128 (37), 12299-12306, 2006 | 376 | 2006 |
| Citizens without shelter: Homelessness, democracy, and political exclusion LC Feldman Cornell University Press, 2004 | 370 | 2004 |
| Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991 | 357 | 1991 |
| Positron-annihilation momentum profiles in aluminum: core contribution and the independent-particle model KG Lynn, JR MacDonald, RA Boie, LC Feldman, JD Gabbe, MF Robbins, ... Physical Review Letters 38 (5), 241, 1977 | 328 | 1977 |
| Modified Deal Grove model for the thermal oxidation of silicon carbide Y Song, S Dhar, LC Feldman, G Chung, JR Williams Journal of Applied Physics 95 (9), 4953-4957, 2004 | 319 | 2004 |
| Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984 | 313 | 1984 |
| Structural basis for near unity quantum yield core/shell nanostructures J McBride, J Treadway, LC Feldman, SJ Pennycook, SJ Rosenthal Nano Letters 6 (7), 1496-1501, 2006 | 309 | 2006 |
Rene LopezUniversity of North Carolina at Chapel HillVerified email at physics.unc.edu
