Leonard Feldman
Leonard Feldman
Professor of Physics and Materials Science
Verified email at rutgers.edu
TitleCited byYear
Fundamentals of surface and thin film analysis
LC Feldman, JW Mayer
North Holland, Elsevier Science Publishers, P. O. Box 211, 1000 AE Amsterdam …, 1986
17541986
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
14862012
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984
9131984
Electronic thin film science: for electrical engineers and materials scientists
JW Mayer, LC Feldman
Prentice Hall, 1992
8631992
Clustering on surfaces
M Zinke-Allmang, LC Feldman, MH Grabow
Surface Science Reports 16 (8), 377-463, 1992
7391992
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
6142001
Equilibrium shape of Si
DJ Eaglesham, AE White, LC Feldman, N Moriya, DC Jacobson
Physical Review Letters 70 (11), 1643, 1993
5811993
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
4792000
Structurally induced optical transitions in Ge-Si superlattices
TP Pearsall, J Bevk, LC Feldman, JM Bonar, JP Mannaerts, A Ourmazd
Physical review letters 58 (7), 729, 1987
3821987
Observation of long-range exciton diffusion in highly ordered organic semiconductors
H Najafov, B Lee, Q Zhou, LC Feldman, V Podzorov
Nature materials 9 (11), 938, 2010
3762010
Size effects in the structural phase transition of nanoparticles
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Physical Review B 65 (22), 224113, 2002
3352002
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied Physics Letters 59 (13), 1611-1613, 1991
3291991
Semiconductor to metal phase transition in the nucleation and growth of nanoparticles and thin films
JY Suh, R Lopez, LC Feldman, RF Haglund Jr
Journal of Applied Physics 96 (2), 1209-1213, 2004
3122004
Positron-annihilation momentum profiles in aluminum: core contribution and the independent-particle model
KG Lynn, JR MacDonald, RA Boie, LC Feldman, JD Gabbe, MF Robbins, ...
Physical Review Letters 38 (5), 241, 1977
2961977
Homogeneously Alloyed CdSxSe1-x Nanocrystals:  Synthesis, Characterization, and Composition/Size-Dependent Band Gap
LA Swafford, LA Weigand, MJ Bowers, JR McBride, JL Rapaport, TL Watt, ...
Journal of the American Chemical Society 128 (37), 12299-12306, 2006
2812006
Pseudomorphic growth of GexSi1x on silicon by molecular beam epitaxy
JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch
Applied Physics Letters 44 (1), 102-104, 1984
2801984
Synthesis, surface studies, composition and structural characterization of CdSe, core/shell and biologically active nanocrystals
SJ Rosenthal, J McBride, SJ Pennycook, LC Feldman
Surface science reports 62 (4), 111-157, 2007
2562007
Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy
J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ...
Physical Review B 36 (7), 4039, 1987
2481987
film thickness metrology by x-ray photoelectron spectroscopy
ZH Lu, JP McCaffrey, B Brar, GD Wilk, RM Wallace, LC Feldman, SP Tay
Applied Physics Letters 71 (19), 2764-2766, 1997
2471997
Pentacene ultrathin film formation on reduced and oxidized Si surfaces
R Ruiz, B Nickel, N Koch, LC Feldman, RF Haglund, A Kahn, G Scoles
Physical Review B 67 (12), 125406, 2003
2452003
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