| Challenges and applications of emerging nonvolatile memory devices W Banerjee Electronics 9 (6), 1029, 2020 | 258 | 2020 |
| Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu Adv. Mater 28 (48), 10623-10629, 2016 | 230 | 2016 |
| Confining cation injection to enhance CBRAM performance by nanopore graphene layer X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ... Small 13 (35), 1603948, 2017 | 176 | 2017 |
| 2015 IEEE Int. Electron Devices Meeting (IEDM) Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... IEEE, 2015 | 163 | 2015 |
| Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory H Lv, X Xu, H Liu, R Liu, Q Liu, W Banerjee, H Sun, S Long, L Li, M Liu Scientific reports 5 (1), 1-6, 2015 | 155 | 2015 |
| Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories W Banerjee, A Kashir, S Kamba Small 18 (23), 2107575, 2022 | 151 | 2022 |
| Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 147 | 2019 |
| Nanocrystals for silicon-based light-emitting and memory devices SK Ray, S Maikap, W Banerjee, S Das Journal of Physics D: Applied Physics 46 (15), 153001, 2013 | 141 | 2013 |
| Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... Nanoscale 8 (34), 15629-15636, 2016 | 121 | 2016 |
| Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix N Gogurla, SP Mondal, AK Sinha, AK Katiyar, W Banerjee, SC Kundu, ... Nanotechnology 24 (34), 345202, 2013 | 121 | 2013 |
| Electronic imitation of behavioral and psychological synaptic activities using TiO x/Al 2 O 3-based memristor devices W Banerjee, Q Liu, H Lv, S Long, M Liu Nanoscale 9 (38), 14442-14450, 2017 | 118 | 2017 |
| Full imitation of synaptic metaplasticity based on memristor devices Q Wu, H Wang, Q Luo, W Banerjee, J Cao, X Zhang, F Wu, Q Liu, L Li, ... Nanoscale 10 (13), 5875-5881, 2018 | 112 | 2018 |
| Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... 2015 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2015 | 104 | 2015 |
| Engineering of defects in resistive random access memory devices W Banerjee, Q Liu, H Hwang Journal of Applied Physics 127 (5), 2020 | 93 | 2020 |
| Atomic view of filament growth in electrochemical memristive elements H Lv, X Xu, P Sun, H Liu, Q Luo, Q Liu, W Banerjee, H Sun, S Long, L Li, ... Scientific Reports 5 (1), 13311, 2015 | 93 | 2015 |
| Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices Q Wu, W Banerjee, J Cao, Z Ji, L Li, M Liu Applied Physics Letters 113 (2), 2018 | 89 | 2018 |
| Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity RD Nikam, M Kwak, J Lee, KG Rajput, W Banerjee, H Hwang Scientific reports 9 (1), 18883, 2019 | 84 | 2019 |
| Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼ pA) and high endurance (> 1010) Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... 2015 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2015 | 81 | 2015 |
| Design of CMOS compatible, high‐speed, highly‐stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM W Banerjee, X Zhang, Q Luo, H Lv, Q Liu, S Long, M Liu Advanced Electronic Materials 4 (2), 1700561, 2018 | 72 | 2018 |
| Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material W Banerjee, X Xu, H Lv, Q Liu, S Long, M Liu ACS omega 2 (10), 6888-6895, 2017 | 64 | 2017 |
Qi LiuFudan UniversityVerified email at ime.ac.cn
