Lior Kornblum
Lior Kornblum
Dept. of Electrical Engineering, Technion - Israel Institute of Technology
Verified email at - Homepage
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Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
I Krylov, L Kornblum, A Gavrilov, D Ritter, M Eizenberg
Applied Physics Letters 100 (17), 173508, 2012
Integration of Self‐Assembled Epitaxial BiFeO3–CoFe2O4 Multiferroic Nanocomposites on Silicon Substrates
DH Kim, NM Aimon, XY Sun, L Kornblum, F Walker, C Ahn, CA Ross
Advanced Functional Materials 24 (37), 5889-5896, 2014
Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic
L Kornblum, DP Fenning, J Faucher, J Hwang, A Boni, MG Han, ...
Energy & Environmental Science 10 (1), 377-382, 2017
Band offsets and Fermi level pinning at metal-Al 2 O 3 interfaces
L Kornblum, JA Rothschild, Y Kauffmann, R Brener, M Eizenberg
Physical Review B 84 (15), 155317, 2011
A high density two-dimensional electron gas in an oxide heterostructure on Si (001)
EN Jin, L Kornblum, DP Kumah, K Zou, CC Broadbridge, JH Ngai, ...
APL Materials 2 (11), 116109, 2014
Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
L Kornblum, B Meyler, C Cytermann, S Yofis, J Salzman, M Eizenberg
Applied Physics Letters 100 (6), 062907-062907-3, 2012
Oxide 2D electron gases as a route for high carrier densities on (001) Si
L Kornblum, EN Jin, DP Kumah, AT Ernst, CC Broadbridge, CH Ahn, ...
Applied Physics Letters 106 (20), 201602, 2015
Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys
L Kornblum, P Shekhter, Y Slovatizky, Y Amouyal, M Eizenberg
Physical Review B 86 (12), 125305, 2012
Effect of H on interface properties of Al2O3/In0. 53Ga0. 47As
Z Liu, S Cui, P Shekhter, X Sun, L Kornblum, J Yang, M Eizenberg, ...
Applied Physics Letters 99 (22), 222104, 2011
Transport at the Epitaxial Interface between Germanium and Functional Oxides
L Kornblum, MD Morales‐Acosta, EN Jin, CH Ahn, FJ Walker
Advanced Materials Interfaces 2 (18), 2015
A Three Component Self‐Assembled Epitaxial Nanocomposite Thin Film
DH Kim, XY Sun, NM Aimon, JJ Kim, MJ Campion, HL Tuller, L Kornblum, ...
Advanced Functional Materials 25 (20), 3091-3100, 2015
The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices
L Kornblum, B Meyler, J Salzman, M Eizenberg
Journal of Applied Physics 113 (7), 074102, 2013
Single atomic layer ferroelectric on silicon
M Dogan, S Fernandez-Peña, L Kornblum, Y Jia, DP Kumah, JW Reiner, ...
Nano letters 18 (1), 241-246, 2018
Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices
JA Rothschild, A Cohen, A Brusilovsky, L Kornblum, Y Kauffmann, ...
Journal of Applied Physics 112 (1), 013717, 2012
Self-assembled multiferroic epitaxial BiFeO 3–CoFe 2 O 4 nanocomposite thin films grown by RF magnetron sputtering
TC Kim, S Ojha, G Tian, SH Lee, HK Jung, JW Choi, L Kornblum, ...
Journal of Materials Chemistry C 6 (20), 5552-5561, 2018
Electronic transport of titanate heterostructures and their potential as channels on (001) Si
L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker
Journal of Applied Physics 118 (10), 105301, 2015
Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures
L Kornblum, Y Paska, JA Rothschild, H Haick, M Eizenberg
Applied Physics Letters 99 (23), 233508, 2011
Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers
T Jaffe, N Felgen, L Gal, L Kornblum, JP Reithmaier, C Popov, ...
Advanced Optical Materials 7 (2), 1800715, 2019
Beveled Oxide Study of the Surface Potential Modulation of Self Assembled Alkyltrichlorosilanes
L Kornblum, Y Paska, H Haick, M Eizenberg
The Journal of Physical Chemistry C 117 (1), 233-237, 2013
Oxide heterostructures for high density 2D electron gases on GaAs
L Kornblum, J Faucher, MD Morales-Acosta, ML Lee, CH Ahn, FJ Walker
Journal of Applied Physics 123 (2), 025302, 2018
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