Pamela Jurczak
Pamela Jurczak
Huawei R&D UK
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Integration of III-V lasers on Si for Si photonics
M Tang, JS Park, Z Wang, S Chen, P Jurczak, A Seeds, H Liu
Progress in Quantum Electronics, 2019
Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
M Tang, S Chen, J Wu, Q Jiang, K Kennedy, P Jurczak, M Liao, ...
IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 50-56, 2016
Influence of droplet size on the growth of self-catalyzed ternary GaAsP nanowires
Y Zhang, AM Sanchez, Y Sun, J Wu, M Aagesen, S Huo, D Kim, P Jurczak, ...
Nano letters 16 (2), 1237-1243, 2016
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
J Yang, Z Liu, P Jurczak, M Tang, K Li, S Pan, AM Sanchez, R Beanland, ...
Journal of Physics D: Applied Physics, 2020
Doping of Self-Catalyzed Nanowires under the Influence of Droplets
Y Zhang, Z Sun, AM Sanchez, M Ramsteiner, M Aagesen, J Wu, D Kim, ...
Nano letters 18 (1), 81-87, 2017
Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer
D Kim, S Hatch, J Wu, KA Sablon, P Lam, P Jurczak, M Tang, WP Gillin, ...
IEEE Journal of Photovoltaics 8 (3), 741-745, 2018
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ...
Advanced Optical Materials, 2000970, 2020
Growth of Pure Zinc-Blende GaAs (P) Core–Shell Nanowires with Highly Regular Morphology
Y Zhang, HA Fonseka, M Aagesen, JA Gott, AM Sanchez, J Wu, D Kim, ...
Nano Letters 17 (8), 4946-4950, 2017
Ten-fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer
P Jurczak, Y Zhang, J Wu, AM Sanchez, M Aagesen, H Liu
Nano Letters, 2017
Gallium Phosphide photoanode coated with TiO2 and CoOx for stable photoelectrochemical water oxidation
M Alqahtani, S Ben-Jabar, M Ebaid, S Sathasivam, P Jurczak, X Xia, ...
Optics express 27 (8), A364-A371, 2019
Thin Ge buffer layer on silicon for integration of III-V on silicon
J Yang, P Jurczak, F Cui, K Li, M Tang, L Billiald, R Beanland, ...
Journal of Crystal Growth 514, 109-113, 2019
Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations
P Jurczak, A Onno, K Sablon, H Liu
Optics Express 23 (19), A1208-A1219, 2015
Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
CG Burguete, D Guo, P Jurczak, F Cui, M Tang, W Chen, Z Deng, Y Chen, ...
IET Optoelectronics 12 (1), 2-4, 2017
Photoelectrochemical water oxidation of GaP 1− x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting
M Alqahtani, S Sathasivam, L Chen, P Jurczak, R Piron, C Levallois, ...
Sustainable Energy & Fuels, 2019
Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping
M Gutiérrez, D Araujo, P Jurczak, J Wu, H Liu
Applied Physics Letters 110 (9), 092103, 2017
2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique
P Jurczak, KA Sablon, M Gutiérrez, H Liu, J Wu
Infrared Physics & Technology 81, 320-324, 2017
Preferred growth direction of III–V nanowires on differently oriented Si substrates
H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ...
Nanotechnology 31 (47), 475708, 2020
Impact of ex-situ annealing on strain and composition of MBE grown GeSn
H Jia, P Jurczak, J Yang, M Tang, K Li, H Deng, M Dang, S Chen, H Liu
Journal of Physics D: Applied Physics 53 (48), 485104, 2020
GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
M Gutiérrez, F Lloret, P Jurczak, J Wu, HY Liu, D Araújo
Journal of Electronic Materials, 1-4, 0
Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates
Y Zhang, M Aagesen, AM Sanchez, J Wu, R Beanland, T Ward, D Kim, ...
SPIE OPTO, 97580E-97580E-8, 2016
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