Sayeef Salahuddin
Sayeef Salahuddin
TSMC Distinguished Professor of Electrical Engineering and Computer Sciences, University of
Verified email at berkeley.edu
Title
Cited by
Cited by
Year
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ...
ACS nano 7 (4), 2898-2926, 2013
37832013
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
S Salahuddin, S Datta
Nano letters 8 (2), 405-410, 2008
15072008
How Good Can Monolayer MoS2 Transistors Be?
Y Yoon, K Ganapathi, S Salahuddin
Nano letters 11 (9), 3768-3773, 2011
14582011
Proposal for an all-spin logic device with built-in memory
B Behin-Aein, D Datta, S Salahuddin, S Datta
Nature nanotechnology 5 (4), 266-270, 2010
8032010
Memory leads the way to better computing
HSP Wong, S Salahuddin
Nature nanotechnology 10 (3), 191-194, 2015
5322015
Negative capacitance in a ferroelectric capacitor
AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ...
Nature materials 14 (2), 182-186, 2015
5122015
Deterministic switching of ferromagnetism at room temperature using an electric field
JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ...
Nature 516 (7531), 370-373, 2014
5112014
Room-temperature antiferromagnetic memory resistor
X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ...
Nature materials 13 (4), 367-374, 2014
5052014
Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure
JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ...
Physical review letters 107 (21), 217202, 2011
4302011
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
4172010
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ...
Applied Physics Letters 99 (11), 113501, 2011
2942011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
AI Khan, CW Yeung, C Hu, S Salahuddin
2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011
2792011
Sub-60mV-swing negative-capacitance FinFET without hysteresis
KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ...
2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015
2582015
Spin Hall effect clocking of nanomagnetic logic without a magnetic field
D Bhowmik, L You, S Salahuddin
Nature nanotechnology 9 (1), 59-63, 2014
2392014
Transport effects on signal propagation in quantum wires
S Salahuddin, M Lundstrom, S Datta
IEEE Transactions on Electron Devices 52 (8), 1734-1742, 2005
2172005
Built-in and induced polarization across LaAlO 3/SrTiO 3 heterojunctions
G Singh-Bhalla, C Bell, J Ravichandran, W Siemons, Y Hikita, ...
Nature Physics 7 (1), 80-86, 2011
1992011
Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy
L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ...
Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015
1792015
Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor
AI Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ...
IEEE Electron Device Letters 37 (1), 111-114, 2015
1752015
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ...
Nano letters 17 (8), 4801-4806, 2017
1672017
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
1632016
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Articles 1–20