| Prospects for LED lighting S Pimputkar, JS Speck, SP DenBaars, S Nakamura Nature photonics 3 (4), 180-182, 2009 | 2378 | 2009 |
| Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces D Leonard, M Krishnamurthy, CM Reaves, SP DenBaars, PM Petroff Applied Physics Letters 63 (23), 3203-3205, 1993 | 2374 | 1993 |
| Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura Applied physics letters 84 (6), 855-857, 2004 | 1783 | 2004 |
| Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra Applied Physics Letters 77 (2), 250-252, 2000 | 1432 | 2000 |
| Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ... Applied physics letters 68 (5), 643-645, 1996 | 1097 | 1996 |
| Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ... Applied physics letters 71 (18), 2572-2574, 1997 | 959 | 1997 |
| “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ... Applied Physics Letters 73 (10), 1370-1372, 1998 | 876 | 1998 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 844 | 2006 |
| Structural characterization of nonpolar a-plane GaN thin films grown on r-plane sapphire MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars Applied Physics Letters 81 (3), 469-471, 2002 | 671 | 2002 |
| Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ... Journal of applied physics 86 (8), 4520-4526, 1999 | 616 | 1999 |
| AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ... IEEE Electron Device Letters 22 (10), 457-459, 2001 | 607 | 2001 |
| Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ... Applied Physics Letters 72 (6), 692-694, 1998 | 606 | 1998 |
| Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012 | 599 | 2012 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005 | 593 | 2005 |
| Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ... Applied Physics Letters 73 (14), 2006-2008, 1998 | 580 | 1998 |
| Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ... Journal of applied physics 80 (6), 3228-3237, 1996 | 567 | 1996 |
| High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 27 (9), 713-715, 2006 | 558 | 2006 |
| High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra Applied Physics Letters 93 (14), 2008 | 535 | 2008 |
| Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck Journal of applied physics 82 (11), 5472-5479, 1997 | 529 | 1997 |
| Enhanced light extraction in LEDs through the use of internal and external optical elements B Thibeault, M Mack, S DenBaars US Patent 6,657,236, 2003 | 528 | 2003 |
