| Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering M Farronato, P Mannocci, M Melegari, S Ricci, CM Compagnoni, D Ielmini Advanced Materials 35 (37), 2205381, 2023 | 28 | 2023 |
| Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini Advanced Electronic Materials 8 (8), 2101161, 2022 | 24 | 2022 |
| Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference M Farronato, M Melegari, S Ricci, S Hashemkani, CM Compagnoni, ... 2022 IEEE 4th International Conference on Artificial Intelligence Circuits …, 2022 | 5 | 2022 |
| Full Control of Solid‐State Electrolytes for Electrostatic Gating C Cao, M Melegari, M Philippi, D Domaretskiy, N Ubrig, ... Advanced Materials 35 (18), 2211993, 2023 | 3 | 2023 |
| Memtransistor devices based on MoS2 for neuromorphic computing M Farronato, P Mannocci, S Ricci, A Bricalli, M Melegari, ... Proceedings of Neuromorphic Materials, Devices, Circuits and Systems …, 2023 | | 2023 |
| Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022). M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini Advanced Electronic Materials 8 (8), 2022 | | 2022 |
| Characterization of MoS2-based memtransistors for memory and computing M Melegari Politecnico di Milano, 2019 | | 2019 |
| Supporting information for Full control of solid-state electrolytes for electrostatic gating C Cao, M Melegari, M Philippi, D Domaretskiy, N Ubrig, ... | | |
