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josip vukusic
josip vukusic
Department of Microtechnology and Nanoscience, Chalmers University of Technology
Verified email at chalmers.se
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Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief
A Haglund, JS Gustavsson, J Vukusic, P Modh, A Larsson
IEEE Photonics Technology Letters 16 (2), 368-370, 2004
2822004
Transverse mode selection in large-area oxide-confined vertical-cavity surface-emitting lasers using a shallow surface relief
H Martinsson, JA Vukusic, M Grabberr, R Michalzik, R Jager, KJ Ebeling, ...
IEEE Photonics Technology Letters 11 (12), 1536-1538, 1999
1771999
Graphene-Si schottky IR detector
M Amirmazlaghani, F Raissi, O Habibpour, J Vukusic, J Stake
IEEE Journal of Quantum electronics 49 (7), 589-594, 2013
1452013
Comparison of optical VCSEL models on the simulation of oxide-confined devices
P Bienstman, R Baets, J Vukusic, A Larsson, MJ Noble, M Brunner, ...
IEEE Journal of Quantum Electronics 37 (12), 1618-1631, 2001
1362001
A subharmonic graphene FET mixer
O Habibpour, S Cherednichenko, J Vukusic, K Yhland, J Stake
IEEE Electron Device Letters 33 (1), 71-73, 2011
127*2011
Terahertz radiation induces non-thermal structural changes associated with Fröhlich condensation in a protein crystal
IV Lundholm, H Rodilla, WY Wahlgren, A Duelli, G Bourenkov, J Vukusic, ...
Structural Dynamics 2 (5), 2015
1082015
A large-signal graphene FET model
O Habibpour, J Vukusic, J Stake
IEEE Transactions on Electron Devices 59 (4), 968-975, 2012
1012012
A comprehensive model for the modal dynamics of vertical-cavity surface-emitting lasers
JS Gustavsson, JA Vukusic, J Bengtsson, A Larsson
IEEE journal of quantum electronics 38 (2), 203-212, 2002
1012002
A 30-GHz integrated subharmonic mixer based on a multichannel graphene FET
O Habibpour, J Vukusic, J Stake
IEEE Transactions on Microwave Theory and Techniques 61 (2), 841-847, 2013
912013
10 dB small-signal graphene FET amplifier
MA Andersson, O Habibpour, J Vukusic, J Stake
Electronics letters 48 (14), 861-863, 2012
792012
Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
YQ Wei, SM Wang, F Ferdos, J Vukusic, A Larsson, QX Zhao, M Sadeghi
Applied physics letters 81 (9), 1621-1623, 2002
572002
Numerical optimization of the single fundamental mode output from a surface modified vertical-cavity surface-emitting laser
JA Vukusic, H Martinsson, JS Gustavsson, A Larsson
IEEE journal of quantum electronics 37 (1), 108-117, 2001
552001
A 0.2-W heterostructure barrier varactor frequency tripler at 113 GHz
J Vukusic, T Bryllert, TA Emadi, M Sadeghi, J Stake
IEEE Electron Device Letters 28 (5), 340-342, 2007
512007
Single-mode power dependence on surface relief size for mode-stabilized oxide-confined vertical-cavity surface-emitting lasers
H Martinsson, JA Vukusic, A Larsson
IEEE Photonics Technology Letters 12 (9), 1129-1131, 2000
432000
Status and prospects of high-power heterostructure barrier varactor frequency multipliers
J Stake, A Malko, T Bryllert, J Vukusic
Proceedings of the IEEE 105 (6), 1008-1019, 2017
422017
Efficient and individually controllable mechanisms for mode and polarization selection in VCSELs, based on a common, localized, sub-wavelength surface grating
JS Gustavsson, Å Haglund, JA Vukušić, J Bengtsson, P Jedrasik, ...
Optics express 13 (17), 6626-6634, 2005
382005
Resistive graphene FET subharmonic mixers: Noise and linearity assessment
MA Andersson, O Habibpour, J Vukusic, J Stake
IEEE transactions on microwave theory and techniques 60 (12), 4035-4042, 2012
342012
11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
T Bryllert, AØ Olsen, J Vukusic, TA Emadi, M Ingvarson, J Stake, ...
Electronics Letters 41 (3), 1, 2005
342005
A 474 GHz HBV Frequency Quintupler Integrated on a 20Thick Silicon Substrate
A Malko, T Bryllert, J Vukusic, J Stake
IEEE Transactions on Terahertz Science and Technology 5 (1), 85-91, 2014
322014
Monolithic HBV-based 282-GHz tripler with 31-mW output power
J Vukusic, T Bryllert, Ø Olsen, J Hanning, J Stake
IEEE Electron Device Letters 33 (6), 800-802, 2012
322012
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