| Forming a type I heterostructure in a group IV semiconductor CO Chui, P Majhi, W Tsai, JT Kavalieros US Patent 7,435,987, 2008 | 510 | 2008 |
| Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding R Fastow, K Hasnat, P Majhi, O Jungroth US Patent 10,651,153, 2020 | 275 | 2020 |
| Si tunnel transistors with a novel silicided source and 46mV/dec swing K Jeon, WY Loh, P Patel, CY Kang, J Oh, A Bowonder, C Park, CS Park, ... 2010 Symposium on VLSI Technology, 121-122, 2010 | 221 | 2010 |
| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008 | 215 | 2008 |
| Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing JC Ho, R Yerushalmi, G Smith, P Majhi, J Bennett, J Halim, VN Faifer, ... Nano Letters 9 (2), 725-730, 2009 | 182 | 2009 |
| Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2 D Gu, SK Dey, P Majhi Applied Physics Letters 89 (8), 2006 | 156 | 2006 |
| InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition N Goel, P Majhi, CO Chui, W Tsai, D Choi, JS Harris Applied physics letters 89 (16), 2006 | 133 | 2006 |
| Work function engineering using lanthanum oxide interfacial layers HN Alshareef, M Quevedo-Lopez, HC Wen, R Harris, P Kirsch, P Majhi, ... Applied physics letters 89 (23), 2006 | 130 | 2006 |
| Prospect of tunneling green transistor for 0.1 V CMOS C Hu, P Patel, A Bowonder, K Jeon, SH Kim, WY Loh, CY Kang, J Oh, ... 2010 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2010 | 123 | 2010 |
| Nanoscale doping of InAs via sulfur monolayers JC Ho, AC Ford, YL Chueh, PW Leu, O Ergen, K Takei, G Smith, P Majhi, ... Applied Physics Letters 95 (7), 2009 | 105 | 2009 |
| Optical and Structural Properties of Eu2+-doped (Sr1− x Ba x) 2SiO4 phosphors JS Kim, YH Park, JC Choi, HL Park Journal of the Electrochemical Society 152 (9), H135, 2005 | 89 | 2005 |
| Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/and HfO/sub 2 CH Lu, GMT Wong, MD Deal, W Tsai, P Majhi, CO Chui, MR Visokay, ... IEEE electron device letters 26 (7), 445-447, 2005 | 85 | 2005 |
| In0. 53Ga0. 47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness … S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ... Applied Physics Letters 92 (22), 2008 | 83 | 2008 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 83 | 2004 |
| Transistors and methods of manufacture thereof H Luan, P Majhi US Patent 7,361,538, 2008 | 77 | 2008 |
| High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric N Goel, P Majhi, W Tsai, M Warusawithana, DG Schlom, MB Santos, ... Applied Physics Letters 91 (9), 2007 | 76 | 2007 |
| Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 75 | 2008 |
| Metal gate work function engineering using AlNx interfacial layers HN Alshareef, HF Luan, K Choi, HR Harris, HC Wen, MA Quevedo-Lopez, ... Applied Physics Letters 88 (11), 2006 | 74 | 2006 |
| Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ... 2007 IEEE Symposium on VLSI Technology, 154-155, 2007 | 72 | 2007 |
| High speed memory operation in channel-last, back-gated ferroelectric transistors AA Sharma, B Doyle, HJ Yoo, IC Tung, J Kavalieros, MV Metz, ... 2020 IEEE International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2020 | 70 | 2020 |
