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Choelhwyi Bae
Choelhwyi Bae
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Title
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Cited by
Year
Characteristics of HfO2 thin films grown by plasma atomic layer deposition
J Kim, S Kim, H Jeon, MH Cho, KB Chung, C Bae
Applied Physics Letters 87 (5), 2005
892005
Methods for identifying an allowable process margin for integrated circuits
C Bae, YS Jin
US Patent 7,642,106, 2010
812010
Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote-and direct-plasma atomic layer deposition methods
J Kim, S Kim, H Kang, J Choi, H Jeon, M Cho, K Chung, S Back, K Yoo, ...
Journal of applied physics 98 (9), 2005
602005
Surface passivation of n-GaN by nitrided-thin-Ga2O3∕ SiO2 and Si3N4 films
C Bae, C Krug, G Lucovsky, A Chakraborty, U Mishra
Journal of applied physics 96 (5), 2674-2680, 2004
542004
Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
C Bae, G Lucovsky
Journal of Vacuum Science & Technology A 22 (6), 2402-2410, 2004
362004
Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
C Bae, C Krug, G Lucovsky
Journal of Vacuum Science & Technology A 22 (6), 2379-2383, 2004
352004
Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition
M Park, J Koo, J Kim, H Jeon, C Bae, C Krug
Applied Physics Letters 86 (25), 2005
342005
Abnormal Grain Growth of Niobium‐Doped Strontium Titanate Ceramics
C Bae, JG Park, YH Kim, H Jeon
Journal of the American Ceramic Society 81 (11), 3005-3009, 1998
261998
Effects of remote plasma nitridation on the structural and electrical characteristics of the gate dielectrics grown using remote plasma atomic layer deposition …
J Choi, S Kim, J Kim, H Kang, H Jeon, C Bae
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (4 …, 2006
222006
Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
S Kim, J Kim, J Choi, H Kang, H Jeon, C Bae
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
202006
Method of correcting a design pattern for an integrated circuit and an apparatus for performing the same
C Bae, JH Kim, YS Jin, DH Lee
US Patent 7,840,917, 2010
172010
Semiconductor device including work function control film patterns and method for fabricating the same
CS Yu, C Bae, J Kim, CM Hong
US Patent 9,064,732, 2015
152015
Work-function difference between Al and n-GaN from Al-gated n-GaN∕ nitrided-thin-Ga2O3∕ SiO2 metal oxide semiconductor structures
C Bae, C Krug, G Lucovsky, A Chakraborty, U Mishra
Applied physics letters 84 (26), 5413-5415, 2004
152004
Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition
S Kim, S Woo, H Hong, H Kim, H Jeon, C Bae
Journal of the Electrochemical Society 154 (2), H97, 2006
122006
Effects of remote plasma pre-oxidation of Si substrates on the characteristics of ALD-deposited HfO2 gate dielectrics
H Kang, S Kim, J Choi, J Kim, H Jeon, C Bae
Electrochemical and solid-state letters 9 (6), G211, 2006
112006
Device-quality GaN–dielectric interfaces by 300 C remote plasma processing
C Bae, GB Rayner, G Lucovsky
Applied surface science 216 (1-4), 119-123, 2003
112003
Low temperature semiconductor surface passivation for nanoelectronic device applications
C Bae, G Lucovsky
Surface science 532, 759-763, 2003
102003
Ex situ growth of the c-axis preferred oriented thin films on substrates
C Bae, JK Lee, SH Lee, HJ Jung
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (5 …, 1999
101999
Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices
C Bae, G Lucovsky
Microelectronic engineering 72 (1-4), 236-240, 2004
92004
Monitoring pattern for detecting a defect in a semiconductor device and method for detecting a defect
C Bae, YW Han, MJ Lee, SD Kwon
US Patent 7,733,099, 2010
82010
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