Ramesh Thamankar
TitleCited byYear
Spin-polarized transport in magnetically assembled carbon nanotube spin valves
R Thamankar, S Niyogi, BY Yoo, YW Rheem, NV Myung, RC Haddon, ...
Applied physics letters 89 (3), 033119, 2006
302006
Magnetically assembled multiwalled carbon nanotubes on ferromagnetic contacts
S Niyogi, C Hangarter, RM Thamankar, YF Chiang, R Kawakami, ...
The Journal of Physical Chemistry B 108 (51), 19818-19824, 2004
292004
Structural and magnetic properties of ultrathin fcc Fe x Mn 1− x films on Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Physical Review B 69 (5), 054411, 2004
232004
Spin-reorientation transition in Fe x Ni 1− x alloy films
R Thamankar, A Ostroukhova, FO Schumann
Physical Review B 66 (13), 134414, 2002
202002
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
R Thamankar, N Raghavan, J Molina, FM Puglisi, SJ O'Shea, ...
Journal of Applied Physics 119 (8), 084304, 2016
132016
Low temperature nanoscale electronic transport on the MoS2 surface
R Thamankar, TL Yap, KEJ Goh, C Troadec, C Joachim
Applied Physics Letters 103 (8), 083106, 2013
132013
Structural and magnetic instabilities in ultrathin Fe-rich alloy films on Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Physical Review B 69 (5), 054419, 2004
102004
Highly Luminescent Heterostructured Copper‐Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling
H Ang, M Bosman, R Thamankar, MFB Zulkifli, SK Yen, A Hariharan, ...
ChemPhysChem 17 (16), 2489-2495, 2016
92016
Effect of submonolayer coverage of Fe and Mn films on the magnetization direction of Ni/Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Journal of magnetism and magnetic materials 281 (2-3), 206-213, 2004
92004
Perpendicular anisotropy in Ni rich NixMn1− x ultrathin films
R Thamankar, S Bhagwat, FO Schumann
Journal of Physics: Condensed Matter 16 (34), 6029, 2004
92004
CAFM based spectroscopy of stress-induced defects in HfO2with experimental evidence of the clustering model and metastable vacancy defect state
A Ranjan, N Raghavan, K Shubhakar, R Thamankar, J Molina, SJ O'Shea, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7, 2016
72016
Tilting, Bending, and Nonterminal Sites in CO/Cu (001)
R Thamankar, HL Meyerheim, A Ernst, S Ostanin, IV Maznichenko, ...
Physical review letters 106 (10), 106101, 2011
62011
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
R. Thamankar et.al
Journal of applied Physics 112, 024301, 2017
52017
A non-volatile resistive memory effect in 2, 2′, 6, 6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy
M CourtÚ, SG Surya, R Thamankar, C Shen, VR Rao, SG Mhailsalkar, ...
RSC advances 7 (6), 3336-3342, 2017
52017
Performance of ultra‐thin HfO2‐based MIM devices after oxygen modulation and post‐metallization annealing in N2
J Molina, R Thamankar, KL Pey
physica status solidi (a) 213 (7), 1807-1813, 2016
42016
Atomic scale interconnection machine
OA Neucheva, R Thamankar, TL Yap, C Troadec, J Deng, C Joachim
Atomic Scale Interconnection Machines, 23-33, 2012
42012
Evidence for superparamagnetism in ultrathin Fe and FexMn1− x films on Cu (1 0 0)
S Bhagwat, R Thamankar, FO Schumann
Journal of magnetism and magnetic materials 290, 216-218, 2005
42005
Understanding the switching mechanism in RRAM using in-situ TEM
KL Pey, R Thamankar, M Sen, M Bosman, N Raghavan, K Shubhakar
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37, 2016
32016
Nanoscale physical analysis of localized breakdown events in HfO2/SiOXdielectric stacks: A correlation study of STM induced BD with C-AFM and TEM
K Shubhakar, KL Pey, M Bosman, R Thamankar, SS Kushvaha, YC Loke, ...
2012 19th IEEE International Symposium on the Physical and Failure Analysisá…, 2012
32012
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ...
Microelectronics Reliability 55 (9-10), 1450-1455, 2015
22015
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Articles 1–20