Kurt Gaskill
Kurt Gaskill
Verified email at nrl.navy.mil
TitleCited byYear
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ...
Physical Review B 51 (19), 13326, 1995
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene
X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ...
Nature nanotechnology 9 (10), 814, 2014
Formation of high Tc superconducting films by organometallic chemical vapor deposition
AD Berry, DK Gaskill, RT Holm, EJ Cukauskas, R Kaplan, RL Henry
Applied physics letters 52 (20), 1743-1745, 1988
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
Microwave performance of GaN MESFETS
SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill
Electronics letters 30 (15), 1248-1249, 1994
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 122102, 2009
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
Modulation spectroscopy as a tool for electronic material characterization
N Bottka, DK Gaskill, RS Sillmon, R Henry, R Glosser
Journal of electronic materials 17 (2), 161-170, 1988
Quantum linear magnetoresistance in multilayer epitaxial graphene
AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ...
Nano letters 10 (10), 3962-3965, 2010
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
Silicon carbide as a platform for power electronics
CR Eddy, DK Gaskill
Science 324 (5933), 1398-1400, 2009
Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production
GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ...
Nano letters 9 (7), 2605-2609, 2009
Electrical characterisation of Ti Schottky barriers on n-type GaN
SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill
Electronics letters 30 (11), 909-911, 1994
In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy
JE Butler, N Bottka, RS Sillmon, DK Gaskill
Journal of Crystal Growth 77 (1-3), 163-171, 1986
Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP
DK Gaskill, N Bottka, L Aina, M Mattingly
Applied physics letters 56 (13), 1269-1271, 1990
Magneto‐optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
YJ Wang, R Kaplan, HK Ng, K Doverspike, DK Gaskill, T Ikedo, I Akasaki, ...
Journal of applied physics 79 (10), 8007-8010, 1996
Chemical vapor deposition experiments using new fluorinated acetylacetonates of calcium, strontium, and barium
AP Purdy, AD Berry, RT Holm, M Fatemi, DK Gaskill
Inorganic Chemistry 28 (14), 2799-2803, 1989
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