Travis J. Anderson
Travis J. Anderson
Verified email at nrl.navy.mil
Title
Cited by
Cited by
Year
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2152010
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1372012
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
1232011
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
1182008
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
932011
Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
T Anderson, F Ren, S Pearton, BS Kang, HT Wang, CY Chang, J Lin
Sensors 9 (6), 4669-4694, 2009
892009
Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor
X Yu, C Li, Z Low, J Lin, TJ Anderson, HT Wang, F Ren, YL Wang, ...
ECS Transactions 16 (7), 127-137, 2008
80*2008
Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors
X Yu, C Li, ZN Low, J Lin, TJ Anderson, HT Wang, F Ren, YL Wang, ...
Sensors and Actuators B: Chemical 135 (1), 188-194, 2008
762008
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
752014
Graphene on Semiconductor Detector
FJ Kub, T Anderson, KD Hobart
US Patent 20,130,082,241, 2013
742013
Graphene on semiconductor detector
FJ Kub, T Anderson, KD Hobart
US Patent 8,872,159, 2014
722014
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of Crystal Growth 350 (1), 21-26, 2012
682012
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
632014
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
632013
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
592016
Robust detection of hydrogen using differential high electron mobility transistor sensing diodes
HT Wang, TJ Anderson, F Ren, C Li, ZN Low, J Lin, BP Gila, SJ Pearton, ...
Applied physics letters 89 (24), 242111, 2006
582006
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Lett. 35 (8), 826-828, 2014
572014
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
542017
Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...
Applied Physics Express 6 (6), 061003, 2013
512013
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
IEEE Electron Device Letters 34 (9), 1115-1117, 2013
472013
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