| Response spectra from mid-to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors B Aslan, HC Liu, M Korkusinski, SJ Cheng, P Hawrylak Applied physics letters 82 (4), 630-632, 2003 | 98 | 2003 |
| Optical anisotropy in GaSe A Seyhan, O Karabulut, BG Akįnoğlu, B Aslan, R Turan Crystal Research and Technology: Journal of Experimental and Industrial …, 2005 | 36 | 2005 |
| Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs/GaSb superlattice photodiodes T Tansel, K Kutluer, Ö Salihoglu, A Aydinli, B Aslan, B Arikan, MC Kilinc, ... IEEE Photonics Technology Letters 24 (9), 790-792, 2012 | 32 | 2012 |
| Enlarging characteristics of four nickel-titanium rotary instrument systems under standardized conditions of operator-related variables Ö Uzun, Ö Topuz, C Aydýn, T Alaçam, B Aslan Journal of Endodontics 33 (9), 1117-1120, 2007 | 31 | 2007 |
| Detailed characterization of a systematic set of quantum dot infrared photodetectors HC Liu, B Aslan, M Korkusinski, SJ Cheng, P Hawrylak Infrared physics & technology 44 (5-6), 503-508, 2003 | 27 | 2003 |
| On the internal photoemission spectrum of PtSi/p-Si infrared detectors B Aslan, R Turan Infrared physics & technology 43 (2), 85-90, 2002 | 22 | 2002 |
| High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors B Aslan, HC Liu, A Bezinger, PJ Poole, M Buchanan, R Rehm, ... Semiconductor science and technology 19 (3), 442, 2004 | 19 | 2004 |
| On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses B Arikan, G Korkmaz, YE Suyolcu, B Aslan, U Serincan Thin Solid Films 548, 288-291, 2013 | 17 | 2013 |
| Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array M Korkmaz, B Arikan, YE Suyolcu, B Aslan, U Serincan Semiconductor Science and Technology 33 (3), 035002, 2018 | 14 | 2018 |
| Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio S Ozdemir, YE Suyolcu, S Turan, B Aslan Applied Surface Science 392, 817-825, 2017 | 14 | 2017 |
| Polarons in electron-populated quantum dots revealed by resonant Raman scattering B Aslan, HC Liu, M Korkusinski, P Hawrylak, DJ Lockwood Physical Review B 73 (23), 233311, 2006 | 14 | 2006 |
| Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices I Cinar, B Aslan, A Gokce, O Dincer, V Karakas, B Stipe, JA Katine, ... Journal of Applied Physics 117 (21), 2015 | 13 | 2015 |
| Observation of resonant tunneling through a self-assembled InAs quantum dot layer B Aslan, HC Liu, JA Gupta, ZR Wasilewski, GC Aers, S Raymond, ... Journal of Vacuum Science & Technology A 24 (3), 704-707, 2006 | 12 | 2006 |
| Correlation between barrier height and band offsets in metal/ heterostructures O Nur, M Karlsteen, M Willander, R Turan, B Aslan, MO Tanner, KL Wang Applied physics letters 73 (26), 3920-3922, 1998 | 12 | 1998 |
| Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells H Yıldırım, B Aslan Journal of Applied Physics 112 (5), 2012 | 11 | 2012 |
| Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz region H Yıldırım, B Aslan Semiconductor science and technology 26 (8), 085017, 2011 | 10 | 2011 |
| On the spectral response of quantum dot infrared photodetectors: Postgrowth annealing and polarization behaviors B Aslan, CY Song, HC Liu Applied Physics Letters 92 (25), 2008 | 10 | 2008 |
| Effects of magnetic field on the terahertz nonlinear optical properties in donor‐doped GaAs/AlGaAs quantum wells H Yıldırım, B Aslan physica status solidi (b) 249 (11), 2207-2212, 2012 | 8 | 2012 |
| Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array A Bezinger, HC Liu, B Aslan, M Buchanan, AJ Springthorpe, PJ Poole, ... Electronics Letters 43 (12), 1, 2007 | 8 | 2007 |
| Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors B Aslan, R Turan, HC Liu, JM Baribeau, M Buchanan, P Chow-Chong Applied Physics B 78, 225-228, 2004 | 7 | 2004 |
Rasit TuranProfessor of PhysicsVerified email at metu.edu.tr
