| Total-Ionizing-Dose Effects on Threshold Switching in -TaS2 Charge Density Wave Devices G Liu, EX Zhang, CD Liang, MA Bloodgood, TT Salguero, DM Fleetwood, ... IEEE Electron Device Letters 38 (12), 1724-1727, 2017 | 53 | 2017 |
| Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics M Gorchichko, Y Cao, EX Zhang, D Yan, H Gong, SE Zhao, P Wang, ... IEEE Transactions on Nuclear Science 67 (1), 245-252, 2019 | 43 | 2019 |
| Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2Gate Dielectrics CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018 | 43 | 2018 |
| Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si EX Zhang, DM Fleetwood, JA Hachtel, C Liang, RA Reed, ML Alles, ... IEEE Transactions on Nuclear Science 64 (1), 226-232, 2016 | 33 | 2016 |
| Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors C Liang, Y Su, EX Zhang, K Ni, ML Alles, RD Schrimpf, DM Fleetwood, ... IEEE Transactions on Nuclear Science 64 (1), 170-175, 2016 | 26 | 2016 |
| Radiation-induced charge trapping and low-frequency noise of graphene transistors P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ... IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017 | 23 | 2017 |
| Capacitance–frequency estimates of border-trap densities in multifin MOS capacitors SE Zhao, R Jiang, EX Zhang, W Liao, C Liang, DM Fleetwood, ... IEEE Transactions on Nuclear Science 65 (1), 175-183, 2017 | 17 | 2017 |
| Laser-induced Single-event Transients in Black Phosphorus MOSFETs C Liang, et al. IEEE Transactions on Nuclear Science, 2018 | 10 | 2018 |
| Radiation-induced charge trapping in black phosphorus MOSFETs with HfO 2 gate dielectrics CD Liang, P Wang, SM Zhao, EX Zhang, ML Alles, DM Fleetwood, ... IEEE Trans. Nucl. Sci. 65 (6), 1227-1238, 2018 | 8 | 2018 |
| Electron mobility in thin In0.53Ga0.47As channel E Cartier, A Majumdar, KT Lee, T Ando, MM Frank, J Rozen, KA Jenkins, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 292-295, 2017 | 8 | 2017 |
| Total-ionizing-dose effects on a graphene X-ray detector laser-scribed from graphene oxide NQ Deng, WJ Liao, J Hu, P Wang, MX Xu, HN Zhang, P Wang, CD Liang, ... IEEE Transactions on Nuclear Science 65 (1), 473-477, 2017 | 2 | 2017 |
| 硬件架构对片上网络性能影响及优化策略研究 梁春东， 杨银堂 西安: 西安电子科技大学, 2011 | 1 | 2011 |
| Shift left design for reliability methodology for ASIC controllers C Liang, S Gupta MICRON–TLP SYSTEMS SOLUTIONS TECHNICAL SEMINAR & Proceedings, 2021 | | 2021 |
| Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors R Jiang, EX Zhang, W Liao, C Liang, D Fleetwood, R Schrimpf, R Reed, ... | | 2018 |
| Radiation effects and low frequency noise in black phosphorus transistors C Liang Vanderbilt University, 2018 | | 2018 |
| Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si J Mitard, EX Zhang, D Fleetwood, J Hachtel, C Liang, R Reed, M Alles, ... | | 2016 |
| Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations C Liang | | 2014 |
| Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics........... CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ... | | |
